Single-electron tunneling in silicon-on-insulator nano-wire transistors

被引：1
|
作者：
Cho, KH
Son, SH
Hong, SH
Kim, BC
Hwang, SW
Ahn, D
Park, BG
Naser, B
Lin, JF
Bird, JP
Ferry, DK
机构：
[1] Korea Univ, Dept Elect & Comp Engn, Seoul 136075, South Korea
[2] Seoul Natl Univ, Inst Quantum Informat Proc & Syst, Seoul 130743, South Korea
[3] Seoul Natl Univ, Sch Elect Engn, Seoul 151742, South Korea
[4] Seoul Natl Univ, Inter Univ Semicond Res Ctr, Seoul 151742, South Korea
[5] Arizona State Univ, Dept Elect Engn, Tempe, AZ 85287 USA
[6] Arizona State Univ, Ctr Solid State Elect Res, Tempe, AZ 85287 USA
来源：
SUPERLATTICES AND MICROSTRUCTURES | 2003年 / 34卷 / 3-6期
关键词：
SOI; nano-wire; single-electron tunneling; potential fluctuation;
D O I：
10.1016/j.spmi.2004.03.015
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
The gate bias dependent evolution of the Coulomb oscillations in a silicon-on-insulator nanowire transistor is reported. Transport data obtained for a wide range of front- and back-gate bias strongly suggest that multiple quantum dots (QDs) with different potential depths are formed in the nano-wire channel. Our data can be clearly interpreted as arising from the turning on or off of one of these QDs as the back-gate bias is varied. Quantitative calculation based on the model of single-electron tunneling through two parallel QDs is in reasonable agreement with the measured data in the back-gate bias range where the third dot is not activated. (C) 2004 Elsevier Ltd. All rights reserved.
引用
收藏
页码：245 / 251
页数：7
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