Temperature Quenching of Radio- and Photoluminescence of Y3(Ga,Al)5O12:Ce3+ and Gd3(Ga,Al)5O12:Ce3+ Garnet Ceramics

被引：17

作者：

Venevtsev, Ivan D. ^{[1
]}

Khanin, Vasilii ^{[1
]}

Rodnyi, Piotr A. ^{[1
]}

Wieczorek, Herfried ^{[2
]}

Ronda, Cees ^{[2
]}

机构：

[1] Peter Great St Petersburg Polytech Univ, St Petersburg 195251, Russia

[2] Philips Res Eindhoven, NL-5656 AE Eindhoven, Netherlands

来源：

IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 2018年 / 65卷 / 08期

关键词：

Ce3+; luminescence; multicomponent garnets; temperature quenching; ELECTRON-TRANSFER; CONDUCTION-BAND; SINGLE-CRYSTALS; LUMINESCENCE; CE3+; SCINTILLATORS; FILMS; YAG; LU;

D O I：

10.1109/TNS.2018.2810894

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Cerium-doped mixed oxide garnets are promising luminescent materials to use as LED phosphors or scintillators for radiation detectors. In this paper, temperature-dependent characteristics of Ce-doped multicomponent garnets ceramics have been studied under photo and X-ray excitation. Ceramic samples of Y(3)GaxAl(5)-xO(12):Ce-0.006 (x = 1, 2, 3, and 4) and of Gd(3)GaxAl(5)-xO(12:)Ce(0.006) (x = 1, 2, and 3) have been used. At high temperature, all samples showed decrease in the Ce3+ luminescence intensity, luminescence decay, and luminescence lifetime due to thermal ionization of Ce3+ excited 5d states. Values of activation energies of the thermal ionization process have been determined from photoluminescence lifetime measurements and shown in comparison with literature data. At low temperature, Gd-containing samples showed significant decrease in light output. In the same temperature range, large thermoluminescence peaks have been observed, indicating that the reduction of Ce3+ emission at low temperatures can be attributed to the localization of charge carriers on traps.

引用

页码：2090 / 2096

页数：7

共 19 条

[1] Determination of the position of the 5d excited levels of Ce3+ ions with respect to the conduction band in the epitaxial films of the multicomponent (Lu,Gd)3(Ga,Al)5O12:Ce garnets [J].

Babin, V. ;

Hanus, M. ;

Krasnikov, A. ;

Kucera, M. ;

Nikl, M. ;

Zazubovich, S. .

OPTICAL MATERIALS, 2016, 62 :465-474

[2] Temperature Quenching of Yellow Ce3+ Luminescence in YAG:Ce [J].

Bachmann, Volker ;

Ronda, Cees ;

Meijerink, Andries .

CHEMISTRY OF MATERIALS, 2009, 21 (10) :2077-2084

[3] Energy migration processes in undoped and Ce-doped multicomponent garnet single crystal scintillators [J].

Bartosiewicz, K. ;

Babin, V. ;

Kamada, K. ;

Yoshikawa, A. ;

Nikl, M. .

JOURNAL OF LUMINESCENCE, 2015, 166 :117-122

[4]

Cherepy N. J., 2010, P SOC PHOTO-OPT INS, V7805, DOI 10.1117/2.1201009.003196

[5] Electronic structure and optical properties of the lanthanide activated RE3(Al1-xGax)5O12 (RE=Gd, Y, Lu) garnet compounds [J].

Dorenbos, Pieter .

JOURNAL OF LUMINESCENCE, 2013, 134 :310-318

[6] Band-gap engineering for removing shallow traps in rare-earth Lu3Al5O12 garnet scintillators using Ga3+ doping [J].

Fasoli, M. ;

Vedda, A. ;

Nikl, M. ;

Jiang, C. ;

Uberuaga, B. P. ;

Andersson, D. A. ;

McClellan, K. J. ;

Stanek, C. R. .

PHYSICAL REVIEW B, 2011, 84 (08)

[7] Effect of Ga content on luminescence and defects formation processes in Gd3(Ga,Al)5O12:Ce single crystals [J].

Grigorjeva, L. ;

Kamada, K. ;

Nikl, M. ;

Yoshikawa, A. ;

Zazubovich, S. ;

Zolotarjovs, A. .

OPTICAL MATERIALS, 2018, 75 :331-336

[8] Electron transfer processes in rare earth doped insulators [J].

Happek, U ;

Basun, SA ;

Choi, J ;

Krebs, JK ;

Raukas, M .

JOURNAL OF ALLOYS AND COMPOUNDS, 2000, 303 :198-206

[9] Changes in trap parameters in various mixed oxide garnets [J].

Khanin, V. ;

Venevtsev, I. ;

Rodnyi, P. ;

Ronda, C. .

RADIATION MEASUREMENTS, 2016, 90 :104-108

[10] Composition-property relationships in (Gd3-xLux)(GayAl5-y)O12:Ce (x=0, 1, 2, 3 and y=0, 1, 2, 3, 4) multicomponent garnet scintillators [J].

Luo, Jialiang ;

Wu, Yuntao ;

Zhang, Guoqing ;

Zhang, Huaijin ;

Ren, Guohao .

OPTICAL MATERIALS, 2013, 36 (02) :476-481

← 1 2 →