Homoepitaxial on-axis growth of 4H-and 6H-SIC by CVD

被引：19

作者：

Hallin, C ^{[1
]}

Wahab, Q ^{[1
]}

Ivanov, I ^{[1
]}

Bergman, P ^{[1
]}

Janzén, E ^{[1
]}

机构：

[1] Linkoping Univ, Dept Phys & Measurement Technol, SE-58183 Linkoping, Sweden

来源：

SILICON CARBIDE AND RELATED MATERIALS 2003, PTS 1 AND 2 | 2004年 / 457-460卷

关键词：

epitaxial growth; thick layers; on-axis; 4H-SiC; 6H-SiC;

D O I：

10.4028/www.scientific.net/MSF.457-460.193

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

More than 30 jam thick high quality homoepitaxial layers have been grown on both 4H-SiC and 6H-SiC on-axis [00. 1] substrates. The epitaxial layers were grown both in a horizontal hot-wall CVD reactor at 1580degreesC, and in a chimney-type vertical hot-wall CVD at 1800-1850degreesC. Photoluminescence (PL) measurements performed at low temperature (2 K) show strong free exciton (FE) related luminescence. The typical residual doping concentration, obtained by capacitance versus voltage measurements, was in the low 10(14) cm(3) range for 4H and 6H (00.1) 0 face. At 1580 degreesC and a growth rate of 3 mum/h the homoepitaxial yield is almost 100% on the 4H (00. 1) and 6H (00. 1) faces, while more than 50% has been achieved on the 4H (00. 1) face.

引用

页码：193 / 196

页数：4

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