MOVPE grown Ga1-xInxAs solar cells for GaInP/GaInAs tandem applications

被引：19
作者：
Dimroth, F
Lanyi, P
Schubert, U
Bett, AW
机构：
[1] Fraunhofer Inst Solar Energy Syst, D-79100 Freiburg, Germany
[2] Freiburg Mat Res Ctr, D-79104 Freiburg, Germany
来源：
JOURNAL OF ELECTRONIC MATERIALS | 2000年 / 29卷 / 01期
关键词：
GaInAs; GaInP; tandem solar cells; MOVPE;
D O I：
10.1007/s11664-000-0092-6
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Lattice-mismatched Ga1-xInxAs solar cells with an absorption edge between 900 and 1150 nm have been grown on GaAs substrates, Different graded Ga1-xInxAs buffer layers and solar cell structures mere evaluated to achieve a good electrical performance of the device. External quantum efficiencies comparable to our best GaAs solar cells were measured. The best 1 cm(2) cell with a bandgap energy of 1.18 eV has an efficiency of 22.6% at AM1.5g and a short circuit current density of 36.4 mA/cm(2). To our knowledge, this is the highest reported efficiency for a Ga0.83In0.17As solar cell.
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页码：42 / 46
页数：5
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