Yellow-green ZnCdSe/BeZnTe II-VI laser diodes grown on InP substrates

被引：35

作者：

Che, SB ^{[1
]}

Nomura, I ^{[1
]}

Kikuchi, A ^{[1
]}

Kishino, K ^{[1
]}

机构：

[1] Sophia Univ, Dept Elect & Elect Engn, Chiyoda Ku, Tokyo 1028554, Japan

来源：

APPLIED PHYSICS LETTERS | 2002年 / 81卷 / 06期

关键词：

D O I：

10.1063/1.1492311

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Yellow-green (560 nm) II-VI laser diodes on InP substrates were successfully operated under the pulsed current injection at 77 K. A separate confinement heterostructure was formed by employing MgSe/BeZnTe:N superlattices (SL) as p-cladding layers and MgSe/ZnCdSe:Cl SL as n-cladding layers. The threshold current density was about 2.5 kA/cm(2). (C) 2002 American Institute of Physics.

引用

页码：972 / 974

页数：3

共 17 条

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