Effects of humidity and ultraviolet characteristics on β-Ga2O3 nanowire sensor

被引：24
作者：
Juan, Y. M. [1 ,2 ]
Chang, S. J. [1 ,2 ]
Hsueh, H. T. [3 ]
Wang, S. H. [1 ,2 ]
Weng, W. Y. [1 ,2 ]
Cheng, T. C. [4 ]
Wu, C. L. [5 ]
机构：
[1] Natl Cheng Kung Univ, Inst Microelect, Tainan 701, Taiwan
[2] Natl Cheng Kung Univ, Dept Elect Engn, Tainan 701, Taiwan
[3] Natl Appl Res Labs, Natl Nano Device Labs, Tainan 741, Taiwan
[4] Natl Kaohsiung Univ Appl Sci, Dept Mech Engn, Kaohsiung 807, Taiwan
[5] Natl Cheng Kung Univ, Dept Phys, Tainan 701, Taiwan
来源：
RSC ADVANCES | 2015年 / 5卷 / 103期
关键词：
ZNO NANOWIRE; ZINC-OXIDE; PHOTOCONDUCTIVITY; SENSITIVITY; FILMS; PHOTODETECTORS; PHOTORESPONSE; FABRICATION; WATER;
D O I：
10.1039/c5ra16710h
中图分类号：
O6 [化学];
学科分类号：
0703 ;
摘要：
Monoclinic gallium oxide (beta-Ga2O3) nanowires (NWs) were synthesized via a vapor-liquid-solid mechanism by heating a GaN/sapphire template. The average diameter and length of the beta-Ga2O3 NWs were around 100 nm and 10 mu m, respectively. It was found that the conductivity of the beta-Ga2O3 NW humidity sensors increased monotonically when the relative humidity (RH) was increased from 30% to 95%. To determine the relationship between ultraviolet (UV) light and humidity sensing properties, the humidity was measured with and without UV illumination, and the UV photoresponse was measured at various RH values, respectively. With UV illumination, the water molecules captured the electrons and holes generated by UV light in a high-RH environment, thus resulting in lower humidity sensitivity than that in the dark. The beta-Ga2O3 NW UV photoresponse results indicate that the dissociated ions of water at high RH decrease the photoresponse of the NWs.
引用
收藏
页码：84776 / 84781
页数：6
相关论文
共 29 条
[1]   Photoresponse of sol-gel-synthesized ZnO nanorods [J].
Ahn, SE ;
Lee, JS ;
Kim, H ;
Kim, S ;
Kang, BH ;
Kim, KH ;
Kim, GT .
APPLIED PHYSICS LETTERS, 2004, 84 (24) :5022-5024
[2]   Design and performance of a simple, room-temperature Ga2O3 nanowire gas sensor [J].
Arnold, S. P. ;
Prokes, S. M. ;
Perkins, F. K. ;
Zaghloul, M. E. .
APPLIED PHYSICS LETTERS, 2009, 95 (10)
[3]   Photoinduced oxygen release and persistent photoconductivity in ZnO nanowires [J].
Bao, Jiming ;
Shalish, Ilan ;
Su, Zhihua ;
Gurwitz, Ron ;
Capasso, Federico ;
Wang, Xiaowei ;
Ren, Zhifeng .
NANOSCALE RESEARCH LETTERS, 2011, 6 :1-7
[4]   Fabrication and characterization of an individual ZnO microwire-based UV photodetector [J].
Chai, G. Y. ;
Chow, L. ;
Lupan, O. ;
Rusu, E. ;
Stratan, G. I. ;
Heinrich, H. ;
Ursaki, V. V. ;
Tiginyanu, I. M. .
SOLID STATE SCIENCES, 2011, 13 (05) :1205-1210
[5]   MEMS-based humidity sensor with integrated temperature compensation mechanism [J].
Chen, Lung-Tai ;
Lee, Chia-Yen ;
Cheng, Wood-Hi .
SENSORS AND ACTUATORS A-PHYSICAL, 2008, 147 (02) :522-528
[6]   Photoconductive gain modelling of GaN photoconductors [J].
Garrido, JA ;
Monroy, E ;
Izpura, I ;
Munoz, E .
SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1998, 13 (06) :563-568
[7]   Fabrication of β-Ga2O3 thin films and solar-blind photodetectors by laser MBE technology [J].
Guo, Daoyou ;
Wu, Zhenping ;
Li, Peigang ;
An, Yuehua ;
Liu, Han ;
Guo, Xuncai ;
Yan, Hui ;
Wang, Guofeng ;
Sun, Changlong ;
Li, Linghong ;
Tang, Weihua .
OPTICAL MATERIALS EXPRESS, 2014, 4 (05) :1067-1076
[8]   Water- and Humidity-Enhanced UV Detector by Using p-Type La-Doped ZnO Nanowires on Flexible Polyimide Substrate [J].
Hsu, Cheng-Liang ;
Li, Hsieh-Heng ;
Hsueh, Ting-Jen .
ACS APPLIED MATERIALS & INTERFACES, 2013, 5 (21) :11142-11151
[9]   A Flexible ZnO Nanowire-Based Humidity Sensor [J].
Hsueh, H. T. ;
Hsueh, T. J. ;
Chang, S. J. ;
Hung, F. Y. ;
Hsu, C. L. ;
Dai, B. T. ;
Lam, K. T. ;
Wen, K. H. .
IEEE TRANSACTIONS ON NANOTECHNOLOGY, 2012, 11 (03) :520-525
[10]   A rapid-response, high-sensitivity nanophase humidity sensor for respiratory monitoring [J].
Kalkan, AK ;
Li, HD ;
O'Brien, CJ ;
Fonash, SJ .
IEEE ELECTRON DEVICE LETTERS, 2004, 25 (08) :526-528
123