Improvement of InGaP/GaAs heterointerface quality by controlling AsH3 flow conditions

被引:10
作者
Fukai, YK [1 ]
Hyuga, F [1 ]
Nittono, T [1 ]
Watanabe, K [1 ]
Sugahara, H [1 ]
机构
[1] NTT, Photon Labs, Kanagawa 2430198, Japan
来源
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1999年 / 17卷 / 06期
关键词
D O I
10.1116/1.591121
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Heterointerfaces between disordered InGaP on GaAs, whose conduction band offset, Delta Ec, is 0.2 eV, can be improved and have less interface charges by controlling the AsH3 cover time and flow rate at the growth interval from GaAs to InGaP by metalorganic chemical vapor deposition. A small AsH3 cover of 5 cc (0.05 min with 100 cc/min) creates a low interface charge density, sigma, of 6.4 x 10(10) cm(-2). Extending the AsH3 cover to only 25 cc increases sigma by one order, even though AsH3 is purged by PH3 for a rather long time after being covered. Interface charges are confirmed to be donors whose energy level is near the conduction band edge. These results show that excess As on the GaAs surface enhances the formation of donor-like defects in the InGaP layer. An As-poor GaAs surface is essential in order to achieve high-quality InGaP/GaAs heterointerfaces. (C) 1999 American Vacuum Society. [S0734-211X(99)00106-7].
引用
收藏
页码:2524 / 2529
页数:6
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