Simulation of quantum transport in monolithic ICs based on In0.53Ga0.47As-In0.52Al0.48As RTDs and HEMTs with a quantum hydrodynamic transport model

被引：5
作者：
Höntschel, J [1 ]
Stenzel, R [1 ]
Klix, W [1 ]
机构：
[1] Univ Appl Sci, Dept Elect Engn, D-01069 Dresden, Germany
来源：
IEEE TRANSACTIONS ON ELECTRON DEVICES | 2004年 / 51卷 / 05期
关键词：
device simulation; high electron mobility transistors (HEMTs); quantum hydrodynamic; quantum transport; resonant tunneling devices;
D O I：
10.1109/TED.2004.825815
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A new quantum hydrodynamic transport model based on a quantum fluid model is used for numerical calculations of different quantum sized devices. The simulation of monolithic integrated circuits of resonant tunneling structures and high electron mobility transistors (HEMT) based on In0.53Ga0.47As-In0.52Al0.48As-InP is demonstrated. With the new model, it is possible to describe quantum mechanical transport phenomena like resonant tunneling of carriers through potential, barriers and particle accumulation in quantum wells. Different structure variations, especially the resonant tunneling diode area and the gate width of the HEMT structure, show variable modulations in the output characteristics of the monolithic integrated device.
引用
收藏
页码：684 / 692
页数：9
相关论文
共 40 条
1234