Near band edge absorption spectra of narrow-gap III-V semiconductor alloys

Near band edge absorption spectra of the narrow-gap semiconductor alloys InxT1-xP, InxT1-xAs, and InxT1-xSb were calculated and compared with those of HgxCd1-xTe. To test accuracy, we compared the calculated absorption spectra in GaAs with experimental results and found good agreement. Within 50 meV from the absorption edge, the absorption coeffi cient of InxT1-xP is found to have about the same magnitude as that in HgxCd1-xTe and GaAs, whereas that in InxT1-xAs and InxT1-xSb is much smaller. This result and other merits found from previous studies indicate that InxT1-xP has a potential to compete favorably with HgxCd1-xTe for long-wavelength infrared applications. (C) 1996 American Institute of Physics.