Fabrication of poly-Si thin film on glass substrate by aluminum-induced crystallization

被引：0

作者：

Xu Man ^{[1
]}

Xia Donglin ^{[1
]}

Yang Sheng ^{[1
]}

Zhao Xiujian ^{[1
]}

机构：

[1] Wuhan Univ Technol, Key Lab State Educ Minist Silicate Mat Sci & Engn, Wuhan 430070, Peoples R China

来源：

JOURNAL OF WUHAN UNIVERSITY OF TECHNOLOGY-MATERIALS SCIENCE EDITION | 2006年 / 21卷 / 02期

关键词：

aluminum-induced crystallization; polycrystalline silicon thin film; amorphous silicon thin film; solar cells;

D O I：

暂无

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Amorphous silicon. (a- Si) thin films were deposited on glass; substrate by PECVD, and polycrstalline silicon (poly-Si) thin films were prepared by aluminum-induced crystallization (AIC). The effects of annealing temperature on, the microstructure and morphology were investigated. The AIC poly-Si thin films were characterized by XRD, Raman and SEM. It is found Mat a-Si thin film has a amorphous structure after annealing at 400 degrees C for 20 min, a-Si a-Si thin films begin to crystallize after annealing at 450 degrees C for 20 min, and the crystallinity of a-Si thin films is enhanced obivously with the increment of annealing temperature.

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页码：33 / 35

页数：3

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