Room-Temperature Epitaxial Growth of High Quality AlN on SiC by Pulsed Sputtering Deposition

被引：59

作者：

Sato, Kazuhiro ^{[1
]}

Ohta, Jitsuo ^{[1
]}

Inoue, Shigeru ^{[1
]}

Kobayashi, Atsushi ^{[1
]}

Fujioka, Hiroshi ^{[1
,2
]}

机构：

[1] Univ Tokyo, Inst Ind Sci, Meguro Ku, Tokyo 1538505, Japan

[2] JST, CREST, Chiyoda Ku, Tokyo 1020075, Japan

来源：

APPLIED PHYSICS EXPRESS | 2009年 / 2卷 / 01期

关键词：

MOLECULAR-BEAM EPITAXY; BY-LAYER GROWTH; STRUCTURAL-PROPERTIES; FILMS; GAN; CONDUCTIVITY; WAVELENGTH; SAPPHIRE; AIN; ZNO;

D O I：

10.1143/APEX.2.011003

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

AlN films have been grown on atomically flat 6H-SiC (000 (1) over bar) C-polarity substrates by pulsed sputtering deposition (PSD) at room temperature (RT). Stepped and terraced structures were clearly observed on the surface of the RT-grown AlN films, which is indicative of the two dimensional growth of AlN films with atomically flat surfaces. The full-width at half-maximum values of the X-ray rocking curves for the AlN 0004 and 10 (1) over bar2 diffractions were as low as 150 and 215 arcsec, respectively. X-ray reciprocal space mapping has revealed that the introduction of misfit dislocations in the AlN films is suppressed in the case of RT growth, which is probably the reason behind the improvement in crystalline quality that is achieved by reducing the growth temperature. It has also been found that misfit dislocations were not even introduced by annealing at 1200 degrees C, indicating that the activation energy for the introduction of dislocations is quite high for the AlN/SiC structure. (C) 2009 The Japan Society of Applied Physics

引用

页码：0110031 / 0110033

页数：3

共 25 条

[1] Crystal growth and conductivity control of group III nitride semiconductors and their application to short wavelength light emitters [J].

Akasaki, I ;

Amano, H .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 1997, 36 (9A) :5393-5408

[2] NEW APPROACH IN EQUILIBRIUM-THEORY FOR STRAINED-LAYER RELAXATION [J].

FISCHER, A ;

KUHNE, H ;

RICHTER, H .

PHYSICAL REVIEW LETTERS, 1994, 73 (20) :2712-2715

[3] A MICROSTRUCTURAL COMPARISON OF THE INITIAL GROWTH OF ALN AND GAN LAYERS ON BASAL-PLANE SAPPHIRE AND SIC SUBSTRATES BY LOW-PRESSURE METALORGANIC CHEMICAL-VAPOR-DEPOSITION [J].

GEORGE, T ;

PIKE, WT ;

KHAN, MA ;

KUZNIA, JN ;

CHANGCHIEN, P .

JOURNAL OF ELECTRONIC MATERIALS, 1995, 24 (04) :241-247

[4]

Hageman W, 2001, PHYS STATUS SOLIDI A, V188, P783, DOI 10.1002/1521-396X(200112)188:2<783::AID-PSSA783>3.0.CO

[5]

2-W

[6] Epitaxial growth of GaN on copper substrates [J].

Inoue, S. ;

Okamoto, K. ;

Matsuki, N. ;

Kim, Tae-Won ;

Fujioka, H. .

APPLIED PHYSICS LETTERS, 2006, 88 (26)

[7] Short-channel GaN/AlGaN doped channel heterostructure field effect transistors with 36.1 cutoff frequency [J].

Khan, MA ;

Chen, Q ;

Shur, MS ;

Dermott, BT ;

Higgins, JA ;

Burm, J ;

Schaff, W ;

Eastman, LF .

ELECTRONICS LETTERS, 1996, 32 (04) :357-358

[8] Epitaxial growth mechanisms of AlN on SiC substrates at room temperature [J].

Kim, Myunghee ;

Ohta, Jitsuo ;

Kobayashi, Atsushi ;

Fujioka, Hiroshi ;

Oshima, Masaharu .

APPLIED PHYSICS LETTERS, 2007, 91 (15)

[9] Low-temperature growth of high quality AlN films on carbon face 6H-SiC [J].

Kim, Myunghee ;

Ohta, Jitsuo ;

Kobayashi, Atsushi ;

Fujioka, Hiroshi ;

Shima, Masaharu .

PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS, 2008, 2 (01) :13-15

[10] Room temperature layer by layer growth of GaN on atomically flat ZnO [J].

Kobayashi, A ;

Fujioka, H ;

Ohta, J ;

Oshima, M .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 2004, 43 (1A-B) :L53-L55

← 1 2 3 →