Pulse plated cadmium telluride films and their characteristics

被引:3
|
作者
Murali, K. R. [1 ]
Thirumoorthy, P. [1 ,2 ]
Sengodan, V. [1 ,3 ]
机构
[1] Cent Electrochem Res Inst, Electrochem Mat Sci Div, Karaikkudi 630006, Tamil Nadu, India
[2] KSR Coll Arts & Sci, Dept Elect, Tiruchengode, India
[3] SNR Sons Coll, Dept Elect, Coimbatore, Tamil Nadu, India
关键词
CdTe; II-VI; Electrodeposition; Pulse plating; HOT WALL EPITAXY; THIN-FILMS; CDTE; ELECTRODEPOSITION; SUBSTITUTION; CDSE;
D O I
10.1007/s11581-008-0260-x
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Cadmium telluride thin films were deposited on conducting glass and titanium substrates by the pulse plating technique at different duty cycles in the range 10-50%. The films were characterised by X-ray diffraction and were found to possess single phase cubic structure. Optical studies indicated a direct band gap of 1.45 eV. Surface morphology of the films indicated that the crystallite size increases with increase of duty cycle. X-ray photoelectron spectroscopy studies confirmed the formation of CdTe. Electron-dispersive X-ray studies were made to estimate the composition. Cross-plane resistivity measurements indicated that the resistivity decreases with increase of duty cycle.
引用
收藏
页码:209 / 213
页数:5
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