Investigation of Pt/Pb(Zr0.2Ti0.8)O3/Ti-Al-O/Si heterostructure as metal/ferroelectric/insulator/semiconductor

被引：7

作者：

Fu, Y. J. ^{[1
]}

Fu, G. S. ^{[1
]}

Li, M. ^{[1
]}

Jia, D. M. ^{[1
]}

Jia, Y. L. ^{[1
]}

Liu, B. T. ^{[1
]}

机构：

[1] Hebei Univ, Hebei Prov Key Lab Optoelect Informat Mat, Coll Phys Sci & Technol, Baoding 071002, Hebei, Peoples R China

来源：

APPLIED PHYSICS LETTERS | 2014年 / 104卷 / 04期

关键词：

FERROELECTRIC CAPACITORS; PHYSICS; SI; INTEGRATION; MEMORIES; SILICON; VOLTAGE; DEVICE; OXIDES; FILMS;

D O I：

10.1063/1.4863231

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Pt/Pb(Zr0.2Ti0.8)O-3(PZT)/Ti-Al-O(TAO)/Si heterostructure has been fabricated as the metal/ferroelectric/insulator/semiconductor structure. It is found that PZT film is polycrystalline, and TAO film is amorphous. Moreover, the memory windows are 3.4 V, 5.9 V, 8.6 V, and 11.2V corresponding, respectively, to the voltages of 10 V, 12 V, 14 V, and 16 V, indicating that the memory window increases linearly with the increase of applied voltage, which can be attributed to the increase of the polarization and coercive voltage of the Pb(Zr0.2Ti0.8)O-3 film. The leakage current density of the device, measured at 15 V, is 3.54 x 10(-6) A/cm(2), is favorable for the device application. (C) 2014 AIP Publishing LLC.

引用

页数：5

共 27 条

[21] Thermal stability and electrical properties of titanium-aluminum oxide ultrathin films as high-k gate dielectric materials [J].