Effect of Deposition Temperature on Microstructure Properties of SiC Thin Films Deposited using RF Magnetron Sputtering

被引：2

作者：

Mala, S. ^{[1
]}

Ashwini, K. B. ^{[1
]}

Latha, H. K. E. ^{[1
]}

Udayakumar, A. ^{[2
]}

机构：

[1] Siddaganga Inst Technol, Dept Elect & Instrumenta Engn, Tumakuru, India

[2] CSIR, Mat Sci Div, Natl Aerosp Labs, Bangalore, Karnataka, India

来源：

INTERNATIONAL CONFERENCE ON TRENDS IN MATERIAL SCIENCE AND INVENTIVE MATERIALS: ICTMIM 2019 | 2019年 / 2105卷

关键词：

RF Magnetron sputtering; SiC; XRD; AFM; FTIR; PIEZORESISTIVE PRESSURE SENSORS; SILICON-CARBIDE; FABRICATION;

D O I：

10.1063/1.5100708

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

This paper presents the microstructure properties of SiC thin films deposited at 300 degrees C and 400 degrees C using RF Magnetron sputtering on silicon wafer substrate. The microstructural properties are investigated for both the samples using X-Ray diffraction (XRD), Fourier transform Infrared spectroscopy (FTIR) and Atomic force microscopy (AFM). The XRD patterns of the SiC thin films show an increase in crystallite size and decrease in strain and dislocation density as deposition temperature increases. An FTIR spectrum shows the Si-C bonding of thin films. AFM investigations show an increase in grain size and decrease in average value of roughness as the deposition temperature is increased. SiC thin films deposited at 400 degrees C exhibited improved microstructural properties.

引用

页数：6

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