Evidence of annealing effects on a high-density Si/SiO2 interfacial layer

被引：77

作者：

Kosowsky, SD

Pershan, PS

Krisch, KS

Bevk, J

Green, ML

Brasen, D

Feldman, LC

Roy, PK

机构：

[1] AT&T BELL LABS,LUCENT TECHNOL,MURRAY HILL,NJ 07974

[2] AT&T BELL LABS,LUCENT TECHNOL,ORLANDO,FL 32819

来源：

APPLIED PHYSICS LETTERS | 1997年 / 70卷 / 23期

关键词：

D O I：

10.1063/1.119090

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Thermally grown Si(001)/SiO2 samples were studied by x-ray reflectivity. Fits of model electron density profiles to the data reveal the existence of an interfacial layer at the Si/SiO2 interface up to 15-Angstrom-thick, with density higher than either the crystalline Si or the main oxide layer. This density of the layer is reduced by a postoxidation anneal. (C) 1997 American Institute of Physics.

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页码：3119 / 3121

页数：3

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