Improving optical transparency in CdGeAs2 crystals by controlling crystalline defects

被引:28
作者
Feigelson, Robert S. [1 ]
机构
[1] Stanford Univ, Geballe Lab Adv Mat, Stanford, CA 94305 USA
关键词
dislocations; etching; optical absorption; gradient freeze; CdGeAS(2); nonlinear optical materials;
D O I
10.1016/j.jcrysgro.2006.04.009
中图分类号
O7 [晶体学];
学科分类号
0702 ; 070205 ; 0703 ; 080501 ;
摘要
In this lecture, some interesting and important new results on the relationship between crystalline defects and optical absorption in CdGeAs2 single crystals will be reviewed. Such crystals are very promising for infrared second harmonic generation, but their use has been limited by non-ideal transparency near 5.5 mu m. Absorption and other crystal properties were found to vary from one laboratory to another, from boule to boule and also within each boule (the latter showing both axial and radial variations). Previous absorption studies were hindered by the lack of high-quality single crystals. Use of the horizontal gradient freeze method together with a low thermal gradient now makes it possible to prepare better quality material and perform more systematic property studies. The role played by point defects (arising from non-stoichiometry and impurities), dislocations, faceting and growth orientation on IR optical absorption will be discussed. (c) 2006 Elsevier B.V. All rights reserved.
引用
收藏
页码:179 / 187
页数:9
相关论文
共 27 条
[1]   Photoluminescence and infrared transmission spectroscopies of CdGeAs2 [J].
Aufgang, JB ;
Labrie, D ;
Olson, K ;
Paton, B ;
Simpson, AM ;
Iseler, GW ;
Borshchevsky, A .
SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1997, 12 (10) :1257-1264
[2]   Effect of donors and acceptors on the optical properties of CdGeAS2 [J].
Bai, L ;
Garces, NY ;
Xu, CC ;
Halliburton, LE ;
Giles, NC ;
Shunemann, PG ;
Nagashio, K ;
Yang, C ;
Feigelson, RS .
NONLINEAR FREQUENCY GENERATION AND CONVERSION: MATERIALS DEVICES, AND APPLICATIONS III, 2004, 5337 :22-29
[3]   Temperature dependence of polarized absorption bands in p-type CdGeAs2 -: art. no. 023105 [J].
Bai, LH ;
Giles, NC ;
Schunemann, PG .
JOURNAL OF APPLIED PHYSICS, 2005, 97 (02)
[4]   Luminescence and optical absorption study of p-type CdGeAs2 [J].
Bai, LH ;
Poston, JA ;
Schunemann, PG ;
Nagashio, K ;
Feigelson, RS ;
Giles, NC .
JOURNAL OF PHYSICS-CONDENSED MATTER, 2004, 16 (08) :1279-1286
[5]   Donor-acceptor pair emission near 0.55 eV in CdGeAs2 [J].
Bai, LH ;
Giles, NC ;
Schunemann, PG ;
Pollak, TM ;
Nagashio, K ;
Feigelson, RS .
JOURNAL OF APPLIED PHYSICS, 2004, 95 (09) :4840-4844
[6]  
Bai LH, 2003, MATER RES SOC SYMP P, V744, P537
[7]   Properties of dopants in ZnGePe2 CdGeAs2, AgGaS2 and AgGaSe2 [J].
Bairamov, BH ;
Rud, VY ;
Rud, YV .
MRS BULLETIN, 1998, 23 (07) :41-44
[8]   Theoretical study of the group-IV antisite acceptor defects in CdGeAs2 [J].
Blanco, MA ;
Costales, A ;
Luaña, V ;
Pandey, R .
APPLIED PHYSICS LETTERS, 2004, 85 (19) :4376-4378
[9]   EFFECTS OF HEAT PRETREATMENT OF STARTING MATERIALS ON THE OPTICAL TRANSPARENCY OF CDGEAS2 CRYSTALS [J].
BORSHCHEVSKY, AS ;
ROUTE, RK ;
FEIGELSON, RS .
MATERIALS RESEARCH BULLETIN, 1980, 15 (04) :409-414
[10]   CDGEAS2-A NEW NONLINEAR CRYSTAL PHASEMATCHABLE AT 10.6 MU-M [J].
BYER, RL ;
KILDAL, H ;
FEIGELSON, RS .
APPLIED PHYSICS LETTERS, 1971, 19 (07) :237-+