Stability and Dark Hysteresis Correlate in NiO-Based Perovskite Solar Cells

被引:81
作者
Di Girolamo, Diego [1 ]
Matteocci, Fabio [2 ]
Kosasih, Felix Utama [3 ]
Chistiakova, Ganna [4 ]
Zuo, Weiwei [4 ]
Divitini, Giorgio [3 ]
Korte, Lars [4 ]
Ducati, Caterina [3 ]
Di Carlo, Aldo [2 ,5 ]
Dini, Danilo [1 ]
Abate, Antonio [4 ,6 ,7 ]
机构
[1] Univ Roma La Sapienza, Dept Chem, Piazzale Aldo Moro 5, I-00185 Rome, Italy
[2] Univ Roma Tor Vergata, Dept Elect Engn, CHOSE Ctr Hybrid & Organ Solar Energy, Via Politecn 1, I-00133 Rome, Italy
[3] Univ Cambridge, Dept Mat Sci & Met, 27 Charles Babbage Rd, Cambridge CB3 0FS, England
[4] Helmholtz Zentrum Berlin Mat & Energie GmbH, Inst Silicon Photovolta, Kekulestr 5, D-12489 Berlin, Germany
[5] Natl Univ Sci & Technol NUST MISiS, LASE, Leninskiy Prospect 6, Moscow 119049, Russia
[6] Fuzhou Univ, Inst Adv Energy Mat, State Key Lab Photocatalysis Energy & Environm, Fuzhou 350002, Fujian, Peoples R China
[7] Univ Naples Federico II, Dept Chem Mat & Prod Engn, Piazzale Tecchio 80, I-80125 Naples, Italy
基金
欧盟地平线“2020”; 中国国家自然科学基金;
关键词
hysteresis; interface engineering; NiO; perovskite solar cells; stability; DEGRADATION; IODINE; INTERFACE; VOLTAMMETRY; PERFORMANCE; CHEMISTRY; BEHAVIOR; METAL; FILMS; ENHANCEMENT;
D O I
10.1002/aenm.201901642
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
In perovskite solar cells (PSCs), the interfaces are a weak link with respect to degradation. Electrochemical reactivity of the perovskite's halides has been reported for both molecular and polymeric hole selective layers (HSLs), and here it is shown that also NiO brings about this decomposition mechanism. Employing NiO as an HSL in p-i-n PSCs with power conversion efficiency (PCE) of 16.8%, noncapacitive hysteresis is found in the dark, which is attributable to the bias-induced degradation of perovskite/NiO interface. The possibility of electrochemically decoupling NiO from the perovskite via the introduction of a buffer layer is explored. Employing a hybrid magnesium-organic interlayer, the noncapacitive hysteresis is entirely suppressed and the device's electrical stability is improved. At the same time, the PCE is improved up to 18% thanks to reduced interfacial charge recombination, which enables more efficient hole collection resulting in higher V-oc and FF.
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页数:10
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