Quantitative Agreement between Electron-Optical Phase Images of WSe2 and Simulations Based on Electrostatic Potentials that Include Bonding Effects

被引:11
作者
Borghardt, S. [1 ]
Winkler, F. [2 ,3 ]
Zanolli, Z. [4 ,5 ,6 ,7 ]
Verstraete, M. J. [8 ,9 ]
Barthel, J. [2 ,10 ]
Tavabi, A. H. [2 ,3 ]
Dunin-Borkowski, R. E. [2 ,3 ]
Kardynal, B. E. [1 ]
机构
[1] Forschungszentrum Julich, PGI 9, D-52425 Julich, Germany
[2] Forschungszentrum Julich, Ernst Ruska Ctr Microscopy & Spect Electrons ER C, D-52425 Julich, Germany
[3] Forschungszentrum Julich, PGI 5, D-52425 Julich, Germany
[4] Forschungszentrum Julich, PGI 1, D-52425 Julich, Germany
[5] Forschungszentrum Julich, Inst Adv Simulat IAS 1, D-52425 Julich, Germany
[6] Rhein Westfal TH Aachen, Inst Theoret Solid State Phys, D-52056 Aachen, Germany
[7] Rhein Westfal TH Aachen, European Theoret Spect Facil, D-52056 Aachen, Germany
[8] Univ Liege, CESAM, Q Mat, NanoMat, B5, B-4000 Liege, Belgium
[9] Univ Liege, European Theoret Spect Facil, B5, B-4000 Liege, Belgium
[10] Rhein Westfal TH Aachen, Gemeinschaftslab Elektronenmikroskopie GFE, D-52074 Aachen, Germany
基金
欧洲研究理事会;
关键词
III-V SEMICONDUCTORS; GE; SI;
D O I
10.1103/PhysRevLett.118.086101
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
The quantitative analysis of electron-optical phase images recorded using off-axis electron holography often relies on the use of computer simulations of electron propagation through a sample. However, simulations that make use of the independent atom approximation are known to overestimate experimental phase shifts by approximately 10%, as they neglect bonding effects. Here, we compare experimental and simulated phase images for few-layer WSe2. We show that a combination of pseudopotentials and all-electron density functional theory calculations can be used to obtain accurate mean electron phases, as well as improved atomic-resolution spatial distribution of the electron phase. The comparison demonstrates a perfect contrast match between experimental and simulated atomic-resolution phase images for a sample of precisely known thickness. The low computational cost of this approach makes it suitable for the analysis of large electronic systems, including defects, substitutional atoms, and material interfaces.
引用
收藏
页数:6
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