Black Phosphorus: Narrow Gap, Wide Applications

被引:614
作者
Castellanos-Gomez, Andres [1 ]
机构
[1] Inst Madrileno Estudios Avanzados Nanociencia IM, E-28049 Madrid, Spain
关键词
FIELD-EFFECT TRANSISTORS; CHEMICAL-VAPOR-DEPOSITION; TRANSPORT-PROPERTIES; BILAYER GRAPHENE; HIGH-QUALITY; LAYER MOS2; LARGE-AREA; PHOTOCURRENT GENERATION; METAL CONTACTS; ATOMIC LAYERS;
D O I
10.1021/acs.jpclett.5b01686
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
The recent isolation of atomically thin black phosphorus by mechanical exfoliation of bulk layered crystals has triggered an unprecedented interest, even higher than that raised by the first works on graphene and other two-dimensionals, in the nanoscience and nanotechnology community. In this Perspective, we critically analyze the reasons behind the surge of experimental and theoretical works on this novel two-dimensional material. We believe that the fact that black phosphorus band gap value spans over a wide range of the electromagnetic spectrum (interesting for thermal imaging, thermoelectrics, fiber optics communication, photovoltaics, etc.) that was not covered by any other two-dimensional material isolated to date, its high carrier mobility, its ambipolar field-effect, and its rather unusual in-plane anisotropy drew the attention of the scientific community toward this two-dimensional material. Here, we also review the current advances, the future directions and the challenges in this young research field.
引用
收藏
页码:4280 / 4291
页数:12
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