Investigating bonding in small silicon-carbon clusters:: Exploration of the potential energy surfaces of Si3C4, Si4C3, and Si4C4 using ab initio molecular dynamics (vol 120, pg 4333, 2004)

被引:3
作者
Bertolus, M
Finocchi, F
Millié, P
机构
[1] CEA CE Cadarache, SESC, LLCC, Dept Etud Combustible, F-13108 St Paul Les Durance, France
[2] Univ Paris 06, Phys Solides Grp, F-75015 Paris, France
[3] Univ Paris 07, F-75015 Paris, France
[4] CNRS, UMR 7588, F-75015 Paris, France
[5] CEA CE Saclay, SPAM, DRECAM,DSM, CNRS,CEA,Lab Francis Perrin, F-91191 Gif Sur Yvette, France
关键词
D O I
10.1063/1.1738104
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
引用
收藏
页码:10853 / 10853
页数:1
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[1]   Investigating bonding in small silicon-carbon clusters:: Exploration of the potential energy surfaces of Si3C4, Si4C3, and Si4C4 using ab initio molecular dynamics [J].
Bertolus, M ;
Finocchi, F ;
Millié, P .
JOURNAL OF CHEMICAL PHYSICS, 2004, 120 (09) :4333-4343