Impact of sheet resistance on 2-D modeling of thin-film solar cells

被引：73
作者：
Koishiyev, Galymzhan T. [1 ]
Sites, James R. [1 ]
机构：
[1] Colorado State Univ, Dept Phys, Ft Collins, CO 80523 USA
来源：
SOLAR ENERGY MATERIALS AND SOLAR CELLS | 2009年 / 93卷 / 03期
关键词：
Sheet; Resistance; TCO; Series; Modeling; Thin film; SERIES RESISTANCE;
D O I：
10.1016/j.solmat.2008.11.015
中图分类号：
TE [石油、天然气工业]; TK [能源与动力工程];
学科分类号：
0807 ; 0820 ;
摘要：
A rigorous mathematical approach was used to find a relation between the transparent-conductive-oxide(TCO)sheet resistance rho(s)(Omega/square) of a thin-film solarcell and the parameter R (Omega) that describes the TCO resistance in a two-dimensional circuit model. Additionally, the mathematical relationship that connects experimentally derived series resistance R(s)(Omega cm(2)) of the solar cell to the TCO sheet resistance rho(s)(Omega/square) and the bulk semiconductor resistivity rho (Omega cm) was derived. It was found that the fill factor of the solar cell is governed by a reduced dimensionless TCO sheet resistance that depends only weakly on the type and quality of the solar cell. Parameters corresponding to thin-film Cu(In,Ga)Se(2), two-junction a-Si, and an ideal solar cell were used as concrete examples. (C) 2008 Elsevier B.V. All rights reserved,
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页码：350 / 354
页数：5
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