Solion ion source for high-efficiency, high-throughput solar cell manufacturing

被引:0
作者
Koo, John [1 ]
Binns, Brant [1 ]
Miller, Timothy [1 ]
Krause, Stephen [1 ]
Skinner, Wesley [1 ]
Mullin, James [1 ]
机构
[1] Appl Mat Inc, Varian Semicond Equipment Business Unit, Gloucester, MA 01930 USA
关键词
D O I
10.1063/1.4828371
中图分类号
TH7 [仪器、仪表];
学科分类号
0804 ; 080401 ; 081102 ;
摘要
In this paper, we introduce the Solion ion source for high-throughput solar cell doping. As the source power is increased to enable higher throughput, negative effects degrade the lifetime of the plasma chamber and the extraction electrodes. In order to improve efficiency, we have explored a wide range of electron energies and determined the conditions which best suit production. To extend the lifetime of the source we have developed an in situ cleaning method using only existing hardware. With these combinations, source life-times of >200 h for phosphorous and >100 h for boron ion beams have been achieved while maintaining 1100 cell-per-hour production. (C) 2013 AIP Publishing LLC.
引用
收藏
页数:3
相关论文
共 6 条
  • [1] [Anonymous], 27 EUR PHOT SOL EN C
  • [2] Chapman B., 1980, GLOW DISCHARGE PROCE, P27
  • [3] Enhanced Life Ion Source For Germanium And Carbon Ion Implantation
    Hsieh, Tseh-Jen
    Colvin, Neil
    Kondratenko, Serguei
    [J]. ION IMPLANTATION TECHNOLOGY 2012, 2012, 1496 : 372 - 375
  • [4] McKenna C. M., 2000, ION IMPLANTATION SCI, P32
  • [5] Mullin J., 2011, 37 IEEE PHOT C SEATT
  • [6] Current capabilities and future needs for semiconductor ion implantation (invited)
    Renau, A.
    [J]. REVIEW OF SCIENTIFIC INSTRUMENTS, 2010, 81 (02)