A 78-114 GHz monolithic subharmonically pumped GaAs-based HEMT diode mixer

被引：34
|
作者：
Hwang, YJ [1 ]
Lien, CH
Wang, H
Sinclair, MW
Gough, RG
Kanoniuk, H
Chu, TH
机构：
[1] Natl Taiwan Univ, Inst Commun Engn, Taipei, Taiwan
[2] Acad Sinica, Inst Astron & Astrophys, Taipei 115, Taiwan
[3] Natl Taiwan Univ, Dept Elect Engn, Taipei, Taiwan
[4] CSIRO, Australia Telescope Natl Facil, Sydney, NSW, Australia
来源：
IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS | 2002年 / 12卷 / 06期
关键词：
MMIC; millimeter-wave mixer;
D O I：
10.1109/LMWC.2002.1009997
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A W-band subharmonically pumped (SHP) diode mixer is designed for fixed LO. frequency operation. It is fabricated on a 4-mil substrate using 0.15 mum GaAs PHEMT MMIC process. The on-wafer measurement results show that the conversion loss is about 10 to 14 dB across the W band, as a 10 dBm 48 GHz LO signal is, pumped. To our. knowledge, this is the state-of-the-art result on low-conversion-loss wideband MMIC SHP diode mixer. The packaged module measurement shows a. similar result. Both the simulation and measurement results are shown in good agreement.
引用
收藏
页码：209 / 211
页数：3
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