A 78-114 GHz monolithic subharmonically pumped GaAs-based HEMT diode mixer

被引：34

作者：

Hwang, YJ ^{[1
]}

Lien, CH

Wang, H

Sinclair, MW

Gough, RG

Kanoniuk, H

Chu, TH

机构：

[1] Natl Taiwan Univ, Inst Commun Engn, Taipei, Taiwan

[2] Acad Sinica, Inst Astron & Astrophys, Taipei 115, Taiwan

[3] Natl Taiwan Univ, Dept Elect Engn, Taipei, Taiwan

[4] CSIRO, Australia Telescope Natl Facil, Sydney, NSW, Australia

来源：

IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS | 2002年 / 12卷 / 06期

关键词：

MMIC; millimeter-wave mixer;

D O I：

10.1109/LMWC.2002.1009997

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A W-band subharmonically pumped (SHP) diode mixer is designed for fixed LO. frequency operation. It is fabricated on a 4-mil substrate using 0.15 mum GaAs PHEMT MMIC process. The on-wafer measurement results show that the conversion loss is about 10 to 14 dB across the W band, as a 10 dBm 48 GHz LO signal is, pumped. To our. knowledge, this is the state-of-the-art result on low-conversion-loss wideband MMIC SHP diode mixer. The packaged module measurement shows a. similar result. Both the simulation and measurement results are shown in good agreement.

引用

页码：209 / 211

页数：3

共 24 条

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