Variable range hopping conduction in low-temperature molecular beam epitaxy GaAs

被引：0
作者：
Rubinger, RM
Albuquerque, HA
da Silva, RL
de Oliveira, AG
Ribeiro, GM
Rodrigues, WN
Rubinger, CPL
Moreira, MVB
机构：
[1] Univ Fed Itajuba, Inst Ciencias, Dept Quim & Fis, BR-37500903 Itajuba, Brazil
[2] Univ Fed Minas Gerais, Inst Ciencias Exatas, Dept Fis, BR-30123970 Belo Horizonte, MG, Brazil
来源：
BRAZILIAN JOURNAL OF PHYSICS | 2006年 / 36卷 / 2A期
关键词：
GaAs; variable range hopping; resistivity measurements;
D O I：
暂无
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
Electric transport properties measured by Van der Pauw resistivity experiments of Low-Temperature Molecular Beam Epitaxy (LT-MBE) GaAs samples are used to identify a method to improve the resistivity of GaAs material. We present results on five samples grown at 265, 310, 315, 325, and 345 degrees C. The electric measurements were carried out at temperatures ranging from 130 to 300 K. In this temperature range the dominant transport process is identified as variable range hopping. The hopping parameter plotted against the growth temperature is shown to present a maximum. The mechanisms responsible for this behavior are discussed in relation to the compensation ratio.
引用
收藏
页码：252 / 254
页数：3
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