Exciton transitions and oxygen as a donor in m-plane AlN homoepitaxial films

被引：20

作者：

Bryan, Zachary ^{[1
]}

Bryan, Isaac ^{[1
]}

Bobea, Milena ^{[1
]}

Hussey, Lindsay ^{[1
]}

Kirste, Ronny ^{[1
]}

Sitar, Zlatko ^{[1
]}

Collazo, Ramon ^{[1
]}

机构：

[1] N Carolina State Univ, Dept Mat Sci & Engn, Raleigh, NC 27695 USA

来源：

JOURNAL OF APPLIED PHYSICS | 2014年 / 115卷 / 13期

基金：

美国国家科学基金会;

关键词：

GAN; IDENTIFICATION;

D O I：

10.1063/1.4870284

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

High-resolution photoluminescence studies on m-plane (1-100) homoepitaxial films grown by metalorganic chemical vapor deposition on AlN revealed several sharp donor-bound exciton (DBX) peaks with a full width at half maximum as narrow as 550 mu eV. Power dependent photoluminescence distinguished DBXs tied to the Gamma(5) free exciton (FX) from those tied to the Gamma(1) FX. Both the n = 2 and n = 1 excited states of the Gamma(5) and Gamma(1) were resolved, giving binding energies of 52meV and 55 meV, respectively. The DBX transition at 6.006 eV was identified as originating from the neutral-donor-oxygen ((OX)-X-0). This assignment was based on secondary ion mass spectroscopy measurements, peak position with respect to the (SiX)-X-0, and deep defect luminescence peaks located at 3.25 eV and 3.58 eV. (C) 2014 AIP Publishing LLC.

引用

页数：5

共 28 条

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