Room-temperature ferromagnetism in epitaxial p-type K-doped ZnO films

被引：23

作者：

Huang, Yubin ^{[1
]}

Zhou, Wei ^{[1
]}

Wu, Ping ^{[1
]}

机构：

[1] Tianjin Univ, Fac Sci, Dept Appl Phys, Inst Adv Mat Phys,Tianjin Key Lab Low Dimens Mat, Tianjin 300072, Peoples R China

来源：

SOLID STATE COMMUNICATIONS | 2014年 / 183卷

基金：

中国国家自然科学基金;

关键词：

Epitaxial ZnO thin film; Ferromagnetism; p-type conductivity; First-principle calculation;

D O I：

10.1016/j.ssc.2013.12.024

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Room temperature ferromagnetism with p-Lype conductivity was observed in epitaxial K-doped ZnO films prepared by RF-magnetron sputtering. The coincident changes in the electrical, optical and magnetic properties indicate that the cation holes play important roles in mediating the ferromagnetism in K-doped ZnO films. The maximum saturation magnetization of 8 emu/cm(3) was obtained in the 8% K-doped film and the thermal annealing in air could stabilize the ferromagnetic signature. Finally, first-principle calculations reveal that the magnetic properties in K-doped ZnO films are attributed to the strong p-p interaction between the unpaired 2p electrons at O sites. (C) 2013 Elsevier Ltd. All rights reserved

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收藏

页码：31 / 34

页数：4

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