Luminescence properties of amorphous silicon-nitride-based optical microcavities

被引:4
|
作者
Giorgis, F
Ballarini, V
Ferrero, S
Mandracci, P
Ricciardi, C
Pirri, CF
机构
[1] Politecn Torino, INFM, I-10129 Turin, Italy
[2] Politecn Torino, Dept Phys, I-10129 Turin, Italy
关键词
D O I
10.1016/S0022-3093(01)01028-6
中图分类号
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
Planar microcavities based on amorphous silicon-nitride Fabry-Perot (F-P) structures have been grown by plasma-enhanced-chemical-vapor deposition (PECVD). Tunable narrow emission bands. directionality of the radiation pattern and a resonant enhancement of the luminescence intensity have been demonstrated. The results. which are promising for thin film light emitting devices, could be explained in terms of a weak coupling regime between photons and electronic excitations. where a spatial redistribution of the spontaneous emission (SE) occurs. (C) 2002 Elsevier Science B.V. All rights reserved.
引用
收藏
页码:653 / 657
页数:5
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