INFLUENCE OF MAGNETIC FIELD ON ELECTRICAL RESISTANCE AND MAGNETIC ORDERING TEMPERATURES IN HOLMIUM THIN FILMS

被引：0
|
作者：
Dudas, Jan [1 ]
Gabani, Slavomir [2 ]
Kavecansky, Viktor [2 ]
Bagi, Jozef
机构：
[1] Tech Univ, Dept Theoret Electrotech & Elect Measurement, Kosice 04389, Slovakia
[2] Slovak Acad Sci, Inst Expt Phys, Kosice 04353, Slovakia
来源：
JOURNAL OF ELECTRICAL ENGINEERING-ELEKTROTECHNICKY CASOPIS | 2009年 / 60卷 / 04期
关键词：
electrical resistivity; Neel temperature; holmium thin films; X-ray diffraction;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The influence of magnetic field on the electrical resistance and magnetic ordering temperature T(N) in Ho thin films is reported. X-ray diffraction investigation of these films revealed two phases composition consisting of the prevailing hexagonal He (space group P6(3)/mmc) and small but inessential content of cubic holmium dihydride HoH(2) (Fm3m) with preferential crystal orientation in these films. Electrical resistance measurements on He films in the thickness range from 98 nm to 215 nm showed a "knee-like" resistance anomaly near the T(N). Magnetic field applied parallel to the thin film plane caused an increasing suppression of the T(N) value up to 5 K with increasing flux density value up to 5 T.
引用
收藏
页码：223 / 226
页数：4
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