Photoluminescence band near 2.9 eV in undoped GaN epitaxial layers

被引：105
作者：
Reshchikov, MA
Shahedipour, F
Korotkov, RY
Wessels, BW [1 ]
Ulmer, MP
机构：
[1] Northwestern Univ, Dept Mat Sci & Engn, Evanston, IL 60208 USA
[2] Northwestern Univ, Ctr Mat Res, Evanston, IL 60208 USA
[3] Northwestern Univ, Dept Phys & Astron, Evanston, IL 60208 USA
[4] AF Ioffe Physicotech Inst, St Petersburg 194021, Russia
来源：
JOURNAL OF APPLIED PHYSICS | 2000年 / 87卷 / 07期
关键词：
D O I：
10.1063/1.372348
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The broad photoluminescence band with a maximum at about 2.9 eV widely observed in undoped epitaxial GaN is studied as a function of temperature and excitation intensity. We attribute the band to transitions from a shallow donor to a deep localized acceptor. The zero-phonon transition for this band is at 3.098 eV as determined from the fine structure at low temperatures. A local vibrational mode in the ground state with an energy of 36 meV is found. (C) 2000 American Institute of Physics. [S0021-8979(00)03207-2].
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页码：3351 / 3354
页数：4
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