Changes in the as-deposited stress state of electroplated Cu layers as a function of plating current and additive concentrations are shown to be directly linked to the incorporation of impurities in the layer. A compressive trend is seen for both decreasing current and increasing additive concentrations due to an increasing incorporation rate A desorption of these impurities from the layer, accompanied by a stress reduction, occurs at just over 100 degreesC during a thermal cycle independent of the deposition parameters.
机构:
School of Materials Science and Engineering, Shanghai Jiao Tong University, Shanghai 200240, ChinaSchool of Materials Science and Engineering, Shanghai Jiao Tong University, Shanghai 200240, China
Hong, Bo
Jiang, Chuan-Hai
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School of Materials Science and Engineering, Shanghai Jiao Tong University, Shanghai 200240, ChinaSchool of Materials Science and Engineering, Shanghai Jiao Tong University, Shanghai 200240, China
Jiang, Chuan-Hai
Wang, Xin-Jian
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School of Materials Science and Engineering, Shanghai Jiao Tong University, Shanghai 200240, ChinaSchool of Materials Science and Engineering, Shanghai Jiao Tong University, Shanghai 200240, China
机构:
Laboratory for Interconnect and Packaging, University of Texas, AustinLaboratory for Interconnect and Packaging, University of Texas, Austin
Gan D.
Ho P.S.
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Laboratory for Interconnect and Packaging, University of Texas, AustinLaboratory for Interconnect and Packaging, University of Texas, Austin
Ho P.S.
Pang Y.
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Department of Aerospace Engineering and Engineering Mechanics, University of Texas, AustinLaboratory for Interconnect and Packaging, University of Texas, Austin
Pang Y.
Huang R.
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Department of Aerospace Engineering and Engineering Mechanics, University of Texas, AustinLaboratory for Interconnect and Packaging, University of Texas, Austin
Huang R.
Leu J.
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Intel Corporation, HillsboroLaboratory for Interconnect and Packaging, University of Texas, Austin
Leu J.
Maiz J.
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机构:
Intel Corporation, HillsboroLaboratory for Interconnect and Packaging, University of Texas, Austin
Maiz J.
Scherban T.
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Intel Corporation, HillsboroLaboratory for Interconnect and Packaging, University of Texas, Austin