35 GHz mode-locking of 1.3 μm quantum dot lasers

被引:86
作者
Kuntz, M
Fiol, G
Lämmlin, M
Bimberg, D
Thompson, MG
Tan, KT
Marinelli, C
Penty, RV
White, IH
Ustinov, VM
Zhukov, AE
Shernyakov, YM
Kovsh, AR
机构
[1] Tech Univ Berlin, Inst Festkorperphys, D-10623 Berlin, Germany
[2] Univ Cambridge, Dept Engn, Cambridge CB2 1PZ, England
[3] Russian Acad Sci, AF Ioffe Physicotech Inst, St Petersburg 194021, Russia
[4] NSC Nanosemicond GmbH, D-44227 Dortmund, Germany
关键词
D O I
10.1063/1.1776340
中图分类号
O59 [应用物理学];
学科分类号
摘要
35 GHz passive mode-locking of 1.3 mum (InGa)As/GaAs quantum dot lasers is reported. Hybrid mode-locking was achieved at frequencies up to 20 GHz. The minimum pulse width of the Fourier-limited pulses was 7 ps with a peak power of 6 mW. Low uncorrelated timing jitter below 1 ps was found in cross correlation experiments. High-frequency operation of the lasers was eased by a ridge waveguide design that includes etching through the active layer. (C) 2004 American Institute of Physics.
引用
收藏
页码:843 / 845
页数:3
相关论文
共 16 条
  • [1] [Anonymous], P OPT FIB COMM C MAR
  • [2] Carrier dynamics and high-speed modulation properties of tunnel injection InGaAs-GaAs quantum-dot lasers
    Bhattacharya, P
    Ghosh, S
    Pradhan, S
    Singh, J
    Wu, ZK
    Urayama, J
    Kim, K
    Norris, TB
    [J]. IEEE JOURNAL OF QUANTUM ELECTRONICS, 2003, 39 (08) : 952 - 962
  • [3] InGaAs-GaAs quantum-dot lasers
    Bimberg, D
    Kirstaedter, N
    Ledentsov, NN
    Alferov, ZI
    Kopev, PS
    Ustinov, VM
    [J]. IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS, 1997, 3 (02) : 196 - 205
  • [4] Bimberg D., 1999, QUANTUM DOT HETEROST
  • [5] Passive mode-locking in 1.3 μm two-section InAs quantum dot lasers
    Huang, XD
    Stintz, A
    Li, H
    Lester, LF
    Cheng, J
    Malloy, KJ
    [J]. APPLIED PHYSICS LETTERS, 2001, 78 (19) : 2825 - 2827
  • [6] 1.3 μm room-temperature GaAs-based quantum-dot laser
    Huffaker, DL
    Park, G
    Zou, Z
    Shchekin, OB
    Deppe, DG
    [J]. APPLIED PHYSICS LETTERS, 1998, 73 (18) : 2564 - 2566
  • [7] LOW-THRESHOLD, LARGE T-O INJECTION-LASER EMISSION FROM (INGA)AS QUANTUM DOTS
    KIRSTAEDTER, N
    LEDENTSOV, NN
    GRUNDMANN, M
    BIMBERG, D
    USTINOV, VM
    RUVIMOV, SS
    MAXIMOV, MV
    KOPEV, PS
    ALFEROV, ZI
    RICHTER, U
    WERNER, P
    GOSELE, U
    HEYDENREICH, J
    [J]. ELECTRONICS LETTERS, 1994, 30 (17) : 1416 - 1417
  • [8] Spectrotemporal response of 1.3 μm quantum-dot lasers
    Kuntz, M
    Ledentsov, NN
    Bimberg, D
    Kovsh, AR
    Ustinov, VM
    Zhukov, AE
    Shernyakov, YM
    [J]. APPLIED PHYSICS LETTERS, 2002, 81 (20) : 3846 - 3848
  • [9] Mao EH, 1997, ELECTRON LETT, V33, P1641, DOI 10.1049/el:19971105
  • [10] Gain and linewidth enhancement factor in InAs quantum-dot laser diodes
    Newell, TC
    Bossert, DJ
    Stintz, A
    Fuchs, B
    Malloy, KJ
    Lester, LF
    [J]. IEEE PHOTONICS TECHNOLOGY LETTERS, 1999, 11 (12) : 1527 - 1529