Effect of electron lateral diffusion in transmission -mode varied-doping Al0.37Ga0.63N photocathode on resolution

被引：0

作者：

Wang, Honggang ^{[1
,3
]}

Ji, Xuehong ^{[2
]}

Hou, Dianli ^{[1
]}

Wang, Lili ^{[1
]}

Hao, Jinguang ^{[1
]}

Sai, Yaozhang ^{[1
]}

机构：

[1] Ludong Univ, Sch Informat & Elect Engn, Yantai 264025, Peoples R China

[2] Ludong Univ, Dept Logist, Yantai 264025, Peoples R China

[3] Nanjing Univ Sci & Technol, Sch Elect & Opt Engn, Nanjing 210094, Peoples R China

来源：

JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS | 2022年 / 24卷 / 1-2期

关键词：

Lateral diffusion; Transmission-mode; Varied-doping; Al0.37Ga0.63N photocathode; Resolution; ALGAN PHOTOCATHODE; PHOTOEMISSION PERFORMANCE; QUANTUM-EFFICIENCY; FRACTION;

D O I：

暂无

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

To achieve a high resolution of transmission-mode Al0.37Ga0.63N photocathode, by establishing the modulation transfer function (MTF) model of this photocathode, we have researched the effect of emission layer thickness T-e, electron diffusion length L-d, recombination velocity at back-interface V-b, and optical absorption coefficient alpha on MTF of varied-doping and uniform-doping Al0.37Ga0.63N photocathodes. The computational results indicate that the varied-doping structure has a potential in improving both resolution and quantum efficiency of transmission-mode Al0.37Ga0.63N photocathode. This improvement is mainly attributed to the reduction of electron lateral diffusion caused by an electric field which is produced by the varied-doping structure, and thus electron transport towards photocathode surface is facilitated.

引用

页码：28 / 34

页数：7