Graded Barrier AlGaN/AlN/GaN Heterostructure for Improved 2-Dimensional Electron Gas Carrier Concentration and Mobility

被引：7

作者：

Das, Palash ^{[1
]}

Halder, Nripendra N. ^{[1
]}

Kumar, Rahul ^{[1
]}

Jana, Sanjay Kr ^{[1
]}

Kabi, Sanjib ^{[1
]}

Borisov, Boris ^{[2
]}

Dabiran, Amir ^{[2
]}

Chow, Peter ^{[2
]}

Biswas, Dhrubes ^{[1
]}

机构：

[1] Indian Inst Technol, Kharagpur 721302, W Bengal, India

[2] SVT Associates, Minneapolis, MN 55344 USA

来源：

ELECTRONIC MATERIALS LETTERS | 2014年 / 10卷 / 06期

关键词：

graded barrier; AlGaN/GaN; HEMT; 2DEG; mobility; PIEZOELECTRIC POLARIZATION; TRANSISTORS; SAPPHIRE;

D O I：

10.1007/s13391-014-4067-9

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

This paper presents an approach of compositional grading of the bather in AlGaN/GaN quantum well hetero-structure to achieve high two dimensional electron gas (2DEG) carrier concentration and mobility for RF power amplifier applications. Plasma assisted Molecular Beam Epitaxy (PAMBE) has been used to grow compositionally graded AlGaN/GaN and AlGaN/AlN/GaN heterostructures. In-situ cathodoluminescence (CL) and ex-situ high resolution x-ray diffraction (HRXRD) along with high resolution transmission electron microscopy (HRTEM) techniques were used to study the compositions and thicknesses of gown heterostructures. Ohmic contact formation for all the samples were found to be challenging due to unusual surface behavior and thus addressed with three different metallization schemes. The graded AlGaN/GaN and AlGaN/AlN/GaN heterostructures show 2DEG carrier concentrations of 2.0 x 10(13) cm(-2) and 2.3 x 10(13) cm(-2) with carrier mobility of 764 cm(2)v(-1)s(-1) and 960 cm(2)v(-1)s(-1), respectively at room temperature. A performance index has been proposed to correlate the obtained results with its suitability for particular RF applications.

引用

页码：1087 / 1092

页数：6

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