Direct-bandgap GeSn grown on silicon with 2230 nm photoluminescence

被引：189

作者：

Ghetmiri, Seyed Amir ^{[1
]}

Du, Wei ^{[1
]}

Margetis, Joe ^{[2
]}

Mosleh, Aboozar ^{[1
]}

Cousar, Larry ^{[1
]}

Conley, Benjamin R. ^{[1
]}

Domulevicz, Lucas ^{[3
]}

Nazzal, Amjad ^{[3
]}

Sun, Greg ^{[4
]}

Soref, Richard A. ^{[4
]}

Tolle, John ^{[2
]}

Li, Baohua ^{[5
]}

Naseem, Hameed A. ^{[1
]}

Yu, Shui-Qing ^{[1
]}

机构：

[1] Univ Arkansas, Dept Elect Engn, Fayetteville, AR 72701 USA

[2] ASM, Phoenix, AZ 85034 USA

[3] Wilkes Univ, Dept Elect Engn & Phys, Wilkes Barre, PA 18766 USA

[4] Univ Massachusetts, Dept Engn, Boston, MA 02125 USA

[5] Arktonics LLC, Fayetteville, AR 72701 USA

来源：

APPLIED PHYSICS LETTERS | 2014年 / 105卷 / 15期

基金：

美国国家科学基金会;

关键词：

ALLOYS; GAP; SEMICONDUCTORS; STRAIN;

D O I：

10.1063/1.4898597

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Material and optical characterizations have been conducted for epitaxially grown Ge1-xSnx thin films on Si with Sn composition up to 10%. A direct bandgap Ge0.9Sn0.1 alloy has been identified by temperature-dependent photoluminescence (PL) study based on the single peak spectrum and the narrow line-width. Room temperature PL emission as long as 2230 nm has also been observed from the same sample. (C) 2014 AIP Publishing LLC.

引用

页数：5

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