Hole Contacts on Transition Metal Dichalcogenides: Interface Chemistry and Band Alignments

被引：185

作者：

McDonnell, Stephen ^{[1
]}

Azcatl, Angelica ^{[1
]}

Addou, Rafik ^{[1
]}

Gong, Cheng ^{[1
]}

Battaglia, Corsin ^{[2
]}

Chuang, Steven ^{[2
]}

Cho, Kyeongjae ^{[1
]}

Javey, Ali ^{[2
]}

Wallace, Robert M. ^{[1
]}

机构：

[1] Univ Texas Dallas, Dept Mat Sci & Engn, Richardson, TX 75080 USA

[2] Univ Calif Berkeley, Berkeley, CA 94720 USA

来源：

ACS NANO | 2014年 / 8卷 / 06期

关键词：

TMDs; MoS2; WSe2; band bending; X-ray photoelectron spectroscopy; hole contacts; DER-WAALS EPITAXY; WORK FUNCTION; IN-SITU; TRANSISTORS; MOS2; GRAPHENE; ADSORPTION; FILM;

D O I：

10.1021/nn501728w

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

MoOx shows promising potential as an efficient hole injection layer for p-FETs based on transition metal dichalcogenides. A combination of experiment and theory is used to study the surface and interfacial chemistry, as well as the band alignments for MoOx/MoS2 and MoOx/WSe2 heterostructures, using photoelectron spectroscopy, scanning tunneling microscopy, and density functional theory. A Mo5+ rich interface region is identified and is proposed to explain the similar low hole Schottky barriers reported in a recent device study utilizing MoOx contacts on MoS2 and WSe2.

引用

页码：6265 / 6272

页数：8

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