Development of an epitaxial lift-off technology for II-VI nanostructures using ZnMgSSe alloys

被引：7

作者：

Moug, R. ^{[1
]}

Bradford, C. ^{[1
]}

Curran, A. ^{[1
]}

Izdebski, F. ^{[1
]}

Davidson, I. ^{[1
]}

Prior, K. A. ^{[1
]}

Warburton, R. J. ^{[1
]}

机构：

[1] Heriot Watt Univ, Sch Engn & Phys Sci, Edinburgh EH14 4AS, Midlothian, Scotland

来源：

MICROELECTRONICS JOURNAL | 2009年 / 40卷 / 03期

基金：

英国工程与自然科学研究理事会;

关键词：

ZnMgSSe; ZnSe; Quantum wells; Epitaxial lift-off; MOLECULAR-BEAM EPITAXY; ZNSE EPILAYERS; QUANTUM-WELLS; FILMS; GAAS;

D O I：

10.1016/j.mejo.2008.06.024

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

An epitaxial lift-off technique for removing wide bandgap II-VI heterostructures from GaAs substrates has previously been demonstrated using lattice-matched MgS as the sacrificial layer. However, using MgS as an etch release layer prevents its use as a wide bandgap barrier in the rest of the structure. Here, we describe the use of the etch-resistant alloy Zn.2Mg.8S.64Se.36 which we have developed as a replacement for MgS. We demonstrate that this alloy can be grown by MBE together with MgS in heterostructures and used as a barrier for ZnSe. A ZnSe quantum well with Zn.2Mg.8S.64Se.36 barriers shows no decrease in photoluminescence intensity after the etching process but shows a shift in emission wavelength associated with the changing strain state. (c) 2008 Elsevier Ltd. All rights reserved.

引用

页码：530 / 532

页数：3

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