Monolithically integrated twin ring diode lasers with quantum-dot active region - art. no. 611521

被引：0
作者：
Cao, Hongjun [1 ]
Gray, Allen L. [1 ]
Lester, Luke F. [1 ]
Osinski, Marek [1 ]
机构：
[1] Univ New Mexico, Ctr High Technol Mat, Albuquerque, NM 87106 USA
来源：
Physics and SImulation of Optoelectronic Devices XIV | 2006年 / 6115卷
关键词：
diode laser; ring laser; quantum dot laser; optoelectronic integrated circuits;
D O I：
10.1117/12.661401
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Optoelectronic integrated circuits incorporating twin ring diode lasers with InAs/InGaAs/GaAs quantum-dot active region have been fabricated and characterized. Directional control and unidirectional operation of ring diode lasers are demonstrated by forward biasing an S-section waveguide incorporated within the ring cavity. Mode-beating spectra from individual ring diode lasers are observed at three bands near 7.5 GHz, 16.6 GHz, and 25.1 GHz, corresponding to single, double, and triple longitudinal mode spacing in the ring cavity. In addition, mode beating spectra between optically independent integrated twin ring diode lasers are also demonstrated, with minimal linewidth of similar to 4 MHz.
引用
收藏
页码：11521 / 11521
页数：9
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