Molecular dynamics simulations of void growth in γ-TiAl single crystal

被引：51

作者：

Tang, Fu-Ling ^{[1
]}

Cai, Hou-Min ^{[1
]}

Bao, Hong-Wei ^{[1
]}

Xue, Hong-Tao ^{[1
]}

Lu, Wen-Jiang ^{[1
]}

Zhu, Liang ^{[1
]}

Rui, Zhi-Yuan ^{[1
]}

机构：

[1] Lanzhou Univ Technol, Dept Mat Sci & Engn, State Key Lab Gansu Adv Nonferrous Met Mat, Lanzhou 730050, Peoples R China

来源：

COMPUTATIONAL MATERIALS SCIENCE | 2014年 / 84卷

基金：

中国国家自然科学基金;

关键词：

gamma-TiAl; Shear loops; Dislocations; Strain rate; Void growth; Molecular dynamics (MD); MICROMECHANICAL MODEL; DUCTILE FRACTURE; NANOVOID GROWTH; COALESCENCE; METALS; DEFORMATION; MECHANISMS; DAMAGE;

D O I：

10.1016/j.commatsci.2013.12.014

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Molecular dynamics simulation was performed to study the growth of spherical nano-voids and the fracture properties of gamma-TiAl single crystal. It is found that the emission of shear loops is the primary mechanism of the void growth: continued production of dislocation cores and the propagation of shear loops make the void grow. Cracks originate from the deformed area near the void surface. As the cracks propagate to the void surface and to the crystal boundaries, gamma-TiAl single crystal finally fractures. The dependence of the void growth on the specimen size, strain rate, and void volume fraction was also investigated. The incipient yield strength decreases as the specimen size or void volume fraction increases, but increases with the increase of the strain rate. Young's modulus is only sensitive to the void volume fraction. (C) 2013 Elsevier B. V. All rights reserved.

引用

页码：232 / 237

页数：6

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