Characteristics of the interfacial capacitance in thin film Ba0.5Sr0.5TiO3 capacitors with SrRuO3 and (La, Sr)CoO3 bottom electrodes

被引:1
作者
Mcaneney, J [1 ]
Sinnamon, LJ [1 ]
Lookman, A [1 ]
Bowman, RM [1 ]
Gregg, JM [1 ]
机构
[1] Queens Univ Belfast, Dept Pure & Appl Phys, Belfast BT7 1NN, Antrim, North Ireland
关键词
BST; thin film; interfacial capacitance; oxygen vacancy; defects;
D O I
10.1080/10584580490441683
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Thin film Ba0.5Sr0.5TiO3 (BST) capacitors of thickness similar to75 nm to similar to1200 nm, with Au top electrodes and SrRuO 3 (SRO) or (La, Sr)CoO3 (LSCO) bottom electrodes were fabricated using Pulsed Laser Deposition. Implementing the "series capacitor model," bulk and interfacial capacitance properties were extracted as a function of temperature and frequency. 'Bulk' properties demonstrated typical ceramic behaviour, displaying little frequency dependence and a permittivity and loss peak at 250 K and 150 K respectively. The interfacial component was found to be relatively temperature and frequency independent for the LSCO/BST capacitors, but for the SRO/BST configuration the interfacial capacitance demonstrated moderate frequency and little temperature dependence below T similar to 300 K but a relatively strong frequency and temperature dependence above T similar to3 00 K. This was attributed to the thermal activation of a space charge component combined with a thermally independent background. The activation energy for the space charge was found to be E-A similar to 0.6 eV suggesting de-trapping of electrons from shallow level traps associated with a thin interfacial layer of oxygen vacancies, parallel to the electrodes.
引用
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页码:79 / 86
页数:8
相关论文
共 11 条
[11]   Investigation of dead-layer thickness in SrRuO3/Ba0.5Sr0.5TiO3/Au thin-film capacitors [J].
Sinnamon, LJ ;
Bowman, RM ;
Gregg, JM .
APPLIED PHYSICS LETTERS, 2001, 78 (12) :1724-1726