Characteristics of the interfacial capacitance in thin film Ba0.5Sr0.5TiO3 capacitors with SrRuO3 and (La, Sr)CoO3 bottom electrodes

被引:1
作者
Mcaneney, J [1 ]
Sinnamon, LJ [1 ]
Lookman, A [1 ]
Bowman, RM [1 ]
Gregg, JM [1 ]
机构
[1] Queens Univ Belfast, Dept Pure & Appl Phys, Belfast BT7 1NN, Antrim, North Ireland
关键词
BST; thin film; interfacial capacitance; oxygen vacancy; defects;
D O I
10.1080/10584580490441683
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Thin film Ba0.5Sr0.5TiO3 (BST) capacitors of thickness similar to75 nm to similar to1200 nm, with Au top electrodes and SrRuO 3 (SRO) or (La, Sr)CoO3 (LSCO) bottom electrodes were fabricated using Pulsed Laser Deposition. Implementing the "series capacitor model," bulk and interfacial capacitance properties were extracted as a function of temperature and frequency. 'Bulk' properties demonstrated typical ceramic behaviour, displaying little frequency dependence and a permittivity and loss peak at 250 K and 150 K respectively. The interfacial component was found to be relatively temperature and frequency independent for the LSCO/BST capacitors, but for the SRO/BST configuration the interfacial capacitance demonstrated moderate frequency and little temperature dependence below T similar to 300 K but a relatively strong frequency and temperature dependence above T similar to3 00 K. This was attributed to the thermal activation of a space charge component combined with a thermally independent background. The activation energy for the space charge was found to be E-A similar to 0.6 eV suggesting de-trapping of electrons from shallow level traps associated with a thin interfacial layer of oxygen vacancies, parallel to the electrodes.
引用
收藏
页码:79 / 86
页数:8
相关论文
共 11 条
[1]   Oxygen-vacancy-related low-frequency dielectric relaxation and electrical conduction in Bi:SrTiO3 [J].
Ang, C ;
Yu, Z ;
Cross, LE .
PHYSICAL REVIEW B, 2000, 62 (01) :228-236
[2]   The physics of ferroelectric memories [J].
Auciello, O ;
Scott, JF ;
Ramesh, R .
PHYSICS TODAY, 1998, 51 (07) :22-27
[3]   A model for fatigue in ferroelectric perovskite thin films [J].
Dawber, M ;
Scott, JF .
APPLIED PHYSICS LETTERS, 2000, 76 (08) :1060-1062
[4]  
HELLWEGE KH, 1981, LANDOLTBORNSTEIN N A, V16
[5]   Alternative dielectrics to silicon dioxide for memory and logic devices [J].
Kingon, AI ;
Maria, JP ;
Streiffer, SK .
NATURE, 2000, 406 (6799) :1032-1038
[6]   Model of leakage characteristics of (Ba, Sr)TiO3 thin films [J].
Maruno, S ;
Kuroiwa, T ;
Mikami, N ;
Sato, K ;
Ohmura, S ;
Kaida, M ;
Yasue, T ;
Koshikawa, T .
APPLIED PHYSICS LETTERS, 1998, 73 (07) :954-956
[7]   Electrical and microstructural degradation with decreasing thickness of (Ba, Sr)TiO3 thin films deposited by RF magnetron sputtering [J].
Paek, SH ;
Won, JH ;
Lee, KS ;
Choi, JS ;
Park, CS .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1996, 35 (11) :5757-5762
[8]   Electric field dependence of ferroelectric phase transition in epitaxial SrTiO3 films on SrRuO3 and La0.5Sr0.5CoO3 [J].
Park, KC ;
Cho, JH .
APPLIED PHYSICS LETTERS, 2000, 77 (03) :435-437
[9]   Oxygen-vacancy ordering as a fatigue mechanism in perovskite ferroelectrics [J].
Scott, JF ;
Dawber, M .
APPLIED PHYSICS LETTERS, 2000, 76 (25) :3801-3803
[10]   Dependence of the interfacial capacitance on measurement regime used for investigation of thin film ferroelectric capacitors [J].
Sinnamon, LJ ;
McAneney, J ;
Bowman, RM ;
Gregg, JM .
JOURNAL OF APPLIED PHYSICS, 2003, 93 (01) :736-744