Synthesis and characterization of sol-gel derived Mn2+ doped In2S3 nanocrystallites embedded in a silica matrix

被引:12
作者
Datta, A. [1 ]
Gorai, S. [1 ]
Chaudhuri, S. [1 ]
机构
[1] Indian Assoc Cultivat Sci, Dept Mat Sci, Kolkata 700032, W Bengal, India
关键词
Mn2+ doped In2S3; sol-gel; optical properties; ESR; colloids;
D O I
10.1007/s11051-005-9049-2
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
Mn2+ doped In2S3-SiO2 nanocomposite thin films were synthesized by sol-gel technique. The films were annealed in air at different temperatures (473-623 K) and characterized by optical, microstructural and electron spin resonance (ESR) study. Optical transmittance study revealed the manifestation of quantum size effect while ESR indicated the presence of manganese in indium sulphide as dispersed dopant rather than manganese cluster.
引用
收藏
页码:919 / 926
页数:8
相关论文
共 15 条
[1]   Acoustic properties of β-In2S3 thin films prepared by spray [J].
Amlouk, M ;
Ben Saïd, MA ;
Kamoun, N ;
Belgacem, S ;
Brunet, N ;
Barjon, D .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1999, 38 (1A) :26-30
[2]   Optical properties of β-In2S3 and β-In2S3:Co2+ single crystals [J].
Choe, SH ;
Bang, TH ;
Kim, NO ;
Kim, HG ;
Lee, CI ;
Jin, MS ;
Oh, SK ;
Kim, WT .
SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2001, 16 (02) :98-102
[3]   PRIMARY SOLID-STATE BATTERIES CONSTRUCTED FROM COPPER AND INDIUM SULFIDES [J].
DALAS, E ;
KOBOTIATIS, L .
JOURNAL OF MATERIALS SCIENCE, 1993, 28 (24) :6595-6597
[4]   AQUEOUS PRECIPITATION AND ELECTRICAL-PROPERTIES OF IN2S3 - CHARACTERIZATION OF THE IN2S3 POLYANILINE AND IN2S3 POLYPYRROLE HETEROJUNCTIONS [J].
DALAS, E ;
SAKKOPOULOS, S ;
VITORATOS, E ;
MAROULIS, G ;
KOBOTIATIS, L .
JOURNAL OF MATERIALS SCIENCE, 1993, 28 (20) :5456-5460
[5]   Electrical properties of β-In2S3 thin films [J].
El Shazly, AA ;
Abd Elhady, D ;
Metwally, HS ;
Seyam, MAM .
JOURNAL OF PHYSICS-CONDENSED MATTER, 1998, 10 (26) :5943-5954
[6]   The singlet model of the anisotropic magnetization of the III-VI diluted magnetic semiconductor, In1-xMnxS -: art. no. 10D308 [J].
Franzese, G ;
Byrd, A ;
Tracy, JL ;
Garner, J ;
Pekarek, TM ;
Miotkowski, I ;
Ramdas, AK .
JOURNAL OF APPLIED PHYSICS, 2005, 97 (10)
[7]   Structure, surface composition, and electronic properties of β-In2S3 and β-In2-xAlxS3 [J].
Kamoun, N ;
Belgacem, S ;
Amlouk, M ;
Bennaceur, R ;
Bonnet, J ;
Touhari, F ;
Nouaoura, M ;
Lassabatere, L .
JOURNAL OF APPLIED PHYSICS, 2001, 89 (05) :2766-2771
[8]   OPTICAL-ABSORPTION OF CO2+ IONS IN IN2S3 THIN-FILMS [J].
KIM, CD ;
LIM, H ;
PARK, HL ;
PARK, HY ;
KIM, JE ;
KIM, HG ;
KIM, YG ;
KIM, WT .
THIN SOLID FILMS, 1993, 224 (01) :69-73
[9]   OPTICAL-ENERGY GAPS OF BETA-IN2S3 THIN-FILMS GROWN BY SPRAY PYROLYSIS [J].
KIM, WT ;
KIM, CD .
JOURNAL OF APPLIED PHYSICS, 1986, 60 (07) :2631-2633
[10]   Chemical bath deposition of indium sulphide thin films: preparation and characterization [J].
Lokhande, CD ;
Ennaoui, A ;
Patil, PS ;
Giersig, M ;
Diesner, K ;
Muller, M ;
Tributsch, H .
THIN SOLID FILMS, 1999, 340 (1-2) :18-23