Tunnel Diodes Based on n+-Ge/p+-Si(001) Epitaxial Structures Grown by the Hot-Wire Chemical Vapor Deposition

被引：1

作者：

Shengurov, V. G. ^{[1
]}

Filatov, D. O. ^{[1
]}

Denisov, S. A. ^{[1
]}

Chalkov, V. Yu. ^{[1
]}

Alyabina, N. A. ^{[1
]}

Zaitsev, A. V. ^{[1
]}

机构：

[1] Lobachevsky State Univ Nizhny Novgorod, Nizhnii Novgorod 603950, Russia

来源：

SEMICONDUCTORS | 2019年 / 53卷 / 09期

基金：

俄罗斯科学基金会;

关键词：

tunnel diode; Ge; Si structures; hot-wire chemical vapor deposition; SILICON;

D O I：

10.1134/S1063782619090203

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

n(+)-Ge/p(+)-Si(001) epitaxial structures are grown by hot-wire chemical vapor deposition from GeH4 at a low substrate temperature (similar to 325 degrees C). Prototype tunnel diodes allowing for monolithic integration into Si-based integrated circuits are formed based on these structures. Doping of the n(+)-Ge layers with a donor impurity (P) to a concentration of >1 x 10(19) cm(-3) is performed via the thermal decomposition of GaP. Distinct regions of the negative differential resistance are observed in the current-voltage characteristics of tunnel diodes.

引用

页码：1238 / 1241

页数：4

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