Structural and optical properties of Zn-doped SnO2 films prepared by DC and RF magnetron co-sputtering

被引：44

作者：

Xu, Bo ^{[1
]}

Ren, Xiao-Guang ^{[1
]}

Gu, Guang-Rui ^{[1
]}

Lan, Lei-Lei ^{[1
]}

Wu, Bao-Jia ^{[1
]}

机构：

[1] Yanbian Univ, Dept Phys, Coll Sci, Yanji 133002, Peoples R China

来源：

SUPERLATTICES AND MICROSTRUCTURES | 2016年 / 89卷

基金：

中国国家自然科学基金;

关键词：

Magnetron co-sputtering; Zn-doped SnO2; Optical properties; Structural properties; THIN-FILMS; PHOTOLUMINESCENCE PROPERTIES; ROOM-TEMPERATURE; FIELD-EMISSION; NANOSTRUCTURES; FERROMAGNETISM; ENHANCEMENT; SB;

D O I：

10.1016/j.spmi.2015.10.043

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

In the present work, the Zn-doped SnO2 (SnO2:Zn) thin films, with different Zn-doping concentration, were successfully prepared on Si (100) and glass substrates by direct current (DC) and radio frequency (RF) magnetron co-sputtering. The effects of dopant concentration, determined by the sputtering power applied on Zn target, on the structural, photoluminescent and optical performances of Zn-doped SnO2 films were investigated by X-ray diffraction(XRD), scanning electron microscope(SEM), energy dispersive X-ray (EDX),high-resolution transmission electron microscopy(HRTEM) and Ultraviolet-VisibleNear IR spectroscopy. The results show all these films exhibited excellent crystalline quality with tetragonal rutile structure. Two photoluminescence (PL) peaks related to Zn-doping were detected at about 351 nm (3.53 eV) and 369 nm (3.36 eV). Moreover, the average transmittance and the band gap energy of the films continuously decreased from 85% to 75% and from 3.52 eV to 334 eV, respectively, with the increase of the doping level. The excellent properties of Zn-doped SnO2 films make them capable for wider applications. (C) 2015 Elsevier Ltd. All rights reserved.

引用

页码：34 / 42

页数：9

共 43 条

[1] Sensing properties of sprayed antimony doped tin oxide thin films: Solution molarity [J].

Babar, A. R. ;

Shinde, S. S. ;

Moholkar, A. V. ;

Bhosale, C. H. ;

Kim, J. H. ;

Rajpure, K. Y. .

JOURNAL OF ALLOYS AND COMPOUNDS, 2011, 509 (06) :3108-3115

[2] The electrical, optical, structural and thermoelectrical characterization of n- and p-type cobalt-doped SnO2 transparent semiconducting films prepared by spray pyrolysis technique [J].

Bagheri-Mohagheghi, Mohammad-Mehdi ;

Shokooh-Saremi, Mehrdad .

PHYSICA B-CONDENSED MATTER, 2010, 405 (19) :4205-4210

[3] Indium and aluminium-doped ZnO thin films deposited onto FTO substrates: nanostructure, optical, photoluminescence and electrical properties [J].

Benhaliliba, M. ;

Benouis, C. E. ;

Aida, M. S. ;

Yakuphanoglu, F. ;

Sanchez Juarez, A. .

JOURNAL OF SOL-GEL SCIENCE AND TECHNOLOGY, 2010, 55 (03) :335-342

[4] Luminescence properties of Eu-doped SnO2 [J].

Chang, Sung-Sik ;

Jo, M. S. .

CERAMICS INTERNATIONAL, 2007, 33 (04) :511-514

[5] Novel nanostructures of functional oxides synthesized by thermal evaporation [J].

Dai, ZR ;

Pan, ZW ;

Wang, ZL .

ADVANCED FUNCTIONAL MATERIALS, 2003, 13 (01) :9-24

[6] Optical properties of SnO2 nanoparticles and nanorods synthesized by solvothermal process [J].

Das, Soumen ;

Kar, Soumitra ;

Chaudhuri, Subhadra .

JOURNAL OF APPLIED PHYSICS, 2006, 99 (11)

[7]

DeepakRaj P., 2015, MAT SCI SEMICON PROC, V39, P428

[8] Enhancement of Field Emission and Photoluminescence Properties of Graphene-SnO2 Composite Nanostructures [J].

Ding, Jijun ;

Yan, Xingbin ;

Li, Jun ;

Shen, Baoshou ;

Yang, Juan ;

Chen, Jiangtao ;

Xue, Qunji .

ACS APPLIED MATERIALS & INTERFACES, 2011, 3 (11) :4299-4305

[9] Dependences of photoluminescence from P-implanted epitaxial Ge [J].

Ding, L. ;

Lim, Andy Eu-Jin ;

Liow, Jason Tsung-Yang ;

Yu, M. B. ;

Lo, G. -Q. .

OPTICS EXPRESS, 2012, 20 (08) :8228-8239

[10] Structural study of undoped and (Mn, In)-doped SnO2 thin films grown by RF sputtering [J].

Espinosa, A. ;

Menendez, N. ;

Prieto, C. ;

de Andres, A. .

JOURNAL OF NON-CRYSTALLINE SOLIDS, 2008, 354 (47-51) :5269-5271

← 1 2 3 4 5 →