Gate-Induced Carrier De localization in Quantum Dot Field Effect Transistors

被引：26

作者：

Turk, Michael E. ^{[1
]}

Choi, Ji-Hyuk ^{[3
]}

Oh, Soong Ju ^{[3
]}

Fafarman, Aaron T. ^{[2
]}

Diroll, Benjamin T.

Murray, Christopher B. ^{[3
,4
]}

Kagan, Cherie R. ^{[2
,3
,4
]}

Kikkawa, James M. ^{[1
]}

机构：

[1] Univ Penn, Dept Astron & Astrophys, Philadelphia, PA 19104 USA

[2] Univ Penn, Dept Elect & Syst Engn, Philadelphia, PA 19104 USA

[3] Univ Penn, Dept Mat Sci & Engn, Philadelphia, PA 19104 USA

[4] Univ Penn, Dept Chem, Philadelphia, PA 19104 USA

来源：

NANO LETTERS | 2014年 / 14卷 / 10期

关键词：

Quantum dots; field-effect transistor; cadmium selenide; delocalization; magnetoresistance; mobility edge; BAND-LIKE TRANSPORT; NEGATIVE MAGNETORESISTANCE; COLLOIDAL NANOCRYSTALS; LOW-VOLTAGE; THIN-FILMS; SOLIDS; PERFORMANCE; METAL; ELECTRONICS; TRANSITION;

D O I：

10.1021/nl5029655

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

We study gate-controlled, low-temperature resistance and magnetotransport in indium-doped CdSe quantum dot field effect transistors. We show that using the gate to accumulate electrons in the quantum dot channel increases the localization product (localization length times dielectric constant) describing transport at the Fermi level, as expected for Fermi level changes near a mobility edge. Our measurements suggest that the localization length increases to significantly greater than the quantum dot diameter.

引用

页码：5948 / 5952

页数：5

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