High-Power Quantum-Dot Vertical-External-Cavity Surface-Emitting Laser Exceeding 8 W

被引:13
作者
Al Nakdali, Dalia [1 ,2 ]
Shakfa, Mohammad Khaled [1 ,2 ]
Gaafar, Mahmoud [1 ,2 ]
Butkus, Mantas [3 ]
Fedorova, Ksenia A. [4 ]
Zulonas, Modestas [4 ]
Wichmann, Matthias [1 ,2 ]
Zhang, Fan [1 ,2 ]
Heinen, Bernd [1 ,2 ]
Rahimi-Iman, Arash [1 ,2 ]
Stolz, Wolfgang [1 ,2 ]
Rafailov, Edik U. [4 ]
Koch, Martin [1 ,2 ]
机构
[1] Univ Marburg, Dept Phys, D-35032 Marburg, Germany
[2] Univ Marburg, Ctr Mat Sci, D-35032 Marburg, Germany
[3] Univ Dundee, Dundee DD1 4HN, Scotland
[4] Aston Univ, Sch Engn & Appl Sci, Birmingham B4 7ET, W Midlands, England
关键词
Quantum-dot (QD) semiconductors; optical pumping; vertical-external-cavity surface-emitting laser (VECSEL); semiconductor disk laser (SDL); wavelength tuning; SEMICONDUCTOR DISK LASERS; OUTPUT POWER; NM; VECSEL;
D O I
10.1109/LPT.2014.2329269
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
We report on a record-high output power from an optically pumped quantum-dot vertical-external-cavity surface-emitting laser, optimized for high-power emission at 1040 nm. A maximum continuous-wave output power of 8.41 W is obtained at a heat sink temperature of 1.5 degrees C. By inserting a birefringent filter inside the laser cavity, a wavelength tuning over a range of 45 nm is achieved.
引用
收藏
页码:1561 / 1564
页数:4
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