Plasma-nitrided high-k polycrystalline nano-array induced by electron irradiation

被引：4
作者：
Huang, A. P.
Wang, L.
Xu, J. B.
Chu, Paul K.
机构：
[1] City Univ Hong Kong, Dept Phys & Mat Sci, Kowloon, Hong Kong, Peoples R China
[2] Chinese Univ Hong Kong, Dept Elect Engn, Solid State Lab, Shatin, Hong Kong, Peoples R China
来源：
NANOTECHNOLOGY | 2006年 / 17卷 / 17期
关键词：
D O I：
10.1088/0957-4484/17/17/015
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
The microstructure of plasma-nitrided high-k ZrO2 thin films is found to continuously transform and larger size nano-crystals are formed during electron bombardment. Real-time high-resolution transmission electron microscopy (HRTEM) studies show that the plasma-nitrided nano-size particles can self-crystallize and regrow, whereas this phenomenon is not observed in amorphous ZrO2 without N incorporation. Similar results are observed in plasma-nitrided HfO2 samples and fine-scale polycrystalline nano-arrays are obtained by electron irradiation. Our results show that incorporation of N is crucial for inducing microstructural evolution as well as polycrystalline nano-array formation in high-k oxide under electron irradiation.
引用
收藏
页码：4379 / 4383
页数：5
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