Self-Assembly and Horizontal Orientation Growth of VO2 Nanowires

被引:50
作者
Cheng, Chun [1 ]
Guo, Hua [2 ]
Amini, Abbas [3 ]
Liu, Kai [4 ]
Fu, Deyi [4 ]
Zou, Jian [4 ]
Song, Haisheng [5 ]
机构
[1] South Univ Sci & Technol, Dept Mat Sci & Engn, Shenzhen 518055, Peoples R China
[2] Univ Calif Berkeley, Lawrence Berkeley Natl Lab, Natl Ctr Electron Microscopy, Berkeley, CA 94720 USA
[3] Univ Western Sydney, Sch Comp Engn & Math, Kingswood, NSW 2751, Australia
[4] Univ Calif Berkeley, Dept Mat Sci & Engn, Berkeley, CA 94720 USA
[5] Huazhong Univ Sci & Technol, Sch Opt & Elect Informat, Wuhan 430074, Peoples R China
关键词
METAL-INSULATOR-TRANSITION; VANADIUM DIOXIDE; PHASE-TRANSITION; CRYSTAL; NANOBEAM; STRAIN;
D O I
10.1038/srep05456
中图分类号
O [数理科学和化学]; P [天文学、地球科学]; Q [生物科学]; N [自然科学总论];
学科分类号
07 ; 0710 ; 09 ;
摘要
Single-crystalline vanadium dioxide (VO2) nanostructures have attracted an intense research interest recently because of their unique single-domain metal-insulator phase transition property. Synthesis of these nanostructures in the past was limited in density, alignment, or single-crystallinity. The assembly of VO2 nanowires (NWs) is desirable for a "bottom-up" approach to the engineering of intricate structures using nanoscale building blocks. Here, we report the successful synthesis of horizontally aligned VO2 NWs with a dense growth mode in the [1-100] quartz direction of a polished x-cut quartz surface using a simple vapor transport method. Our strategy of controlled growth of VO2 NWs promisingly paves the way for designing novel metal-insulator transition devices based on VO2 NWs.
引用
收藏
页数:5
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