Resonant-cavity-enhanced high-speed Si photodiode grown by epitaxial lateral overgrowth

被引：42

作者：

Schaub, JD ^{[1
]}

Li, R

Schow, CL

Campbell, JC

Neudeck, GW

Denton, J

机构：

[1] Univ Texas, Austin, TX 78712 USA

[2] Purdue Univ, W Lafayette, IN 47907 USA

来源：

IEEE PHOTONICS TECHNOLOGY LETTERS | 1999年 / 11卷 / 12期

基金：

美国国家科学基金会;

关键词：

photodiode; silicon;

D O I：

10.1109/68.806875

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We report a resonant cavity Si photodiode grown by merged epitaxial lateral overgrowth. At a reverse bias of 5 V, the dark current was 2.7 pA and the bandwidth exceeded 34 GHz, The peak quantum efficiencies ranged from 42% at 704 nm to 31% at 836 nm. This is the highest speed reported for a Si p-i-n photodiode and the highest bandwidth-efficiency product for any Si-based photodetector.

引用

页码：1647 / 1649

页数：3

共 13 条

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