Molecular-beam epitaxy growth and characterization of mid-infrared quantum cascade laser structures

被引：29

作者：

Kosiel, Kamil ^{[1
]}

Kubacka-Traczyk, Justyna ^{[1
]}

Karbownik, Piotr ^{[1
]}

Szerling, Anna ^{[1
]}

Muszalski, Jan ^{[1
]}

Bugajski, Madej ^{[1
,2
]}

Romanowski, Przemek ^{[3
]}

Gaca, Jaroslaw ^{[4
]}

Wojcik, Marek ^{[4
]}

机构：

[1] Inst Electr Mat Technol, PL-02668 Warsaw, Poland

[2] Warsaw Univ Technol, Fac Phys, PL-00662 Warsaw, Poland

[3] Polish Acad Sci, Inst Phys, PL-02668 Warsaw, Poland

[4] Inst Elect Mat Technol, PL-01919 Warsaw, Poland

来源：

MICROELECTRONICS JOURNAL | 2009年 / 40卷 / 03期

关键词：

Quantum cascade laser; Unipolar devices; Intersubband transitions; GaAs/AlGaAs lasers; Molecular-beam epitaxy; Mid-infrared;

D O I：

10.1016/j.mejo.2008.06.091

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The development of molecular-beam epitaxy (MBE) of GaAs/AlGaAs heterostructures, used for fabrication of similar to 9 mu m quantum cascade lasers (QCLs), is reported. The X-ray diffractometry (XRD) structural characterization, as an integral part of this process, is presented as well. Some conclusions, concerning the relationships between the used type of epitaxial technology and the necessity of special procedures of growth rate (V-gr) calibration, are reached. The influence of the structural features of the QCL active region on the electronic band structure is calculated, and consequently some predictions as to the device electrical properties are presented as well. (C) 2008 Elsevier Ltd. All rights reserved.

引用

页码：565 / 569

页数：5

共 6 条

[1]

Harrison P., 2005, QUANTUM WELLS WIRES

[2] 300 K operation of a GaAs-based quantum-cascade laser at λ≈9 μm [J].